A Rational Fabrication Method for Low Switching-Temperature VO(2)

Due to its remarkable switching effect in electrical and optical properties, VO [Formula: see text] is a promising material for several applications. However, the stoichiometry control of multivalent vanadium oxides, especially with a rational deposition technique, is still challenging. Here, we propose and optimize a simple fabrication method for VO [Formula: see text] rich layers by the oxidation of metallic vanadium in atmospheric air. It was shown that a sufficiently broad annealing time window of 3.0–3.5 h can be obtained at an optimal oxidation temperature of 400 °C. The presence of VO [Formula: see text] was detected by selected area diffraction in a transmission electron microscope. According to the temperature dependent electrical measurements, the resistance contrast (R(30 °C)/R(100 °C)) varied between 44 and 68, whereas the optical switching was confirmed using in situ spectroscopic ellipsometric measurement by monitoring the complex refractive indices. The obtained phase transition temperature, both for the electrical resistance and for the ellipsometric angles, was found to be 49 ± 7 °C, i.e., significantly lower than that of the bulk VO(2) of 68 ± 6 °C.