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Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography
The InAs/InP quantum dots (QDs) are investigated by time-integrated (PL) and time-resolved photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet epitaxy technique using block copolymer lithography. The estimated QDs surface density is ∼1.5 × 10(10) cm(−2). The PL e...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7830905/ https://www.ncbi.nlm.nih.gov/pubmed/33466881 http://dx.doi.org/10.3390/ma14020391 |
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author | Holewa, Paweł Jasiński, Jakub Shikin, Artem Lebedkina, Elizaveta Maryński, Aleksander Syperek, Marcin Semenova, Elizaveta |
author_facet | Holewa, Paweł Jasiński, Jakub Shikin, Artem Lebedkina, Elizaveta Maryński, Aleksander Syperek, Marcin Semenova, Elizaveta |
author_sort | Holewa, Paweł |
collection | PubMed |
description | The InAs/InP quantum dots (QDs) are investigated by time-integrated (PL) and time-resolved photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet epitaxy technique using block copolymer lithography. The estimated QDs surface density is ∼1.5 × 10(10) cm(−2). The PL emission at [Formula: see text] is centered at 1.5 μm. Below [Formula: see text] , the PL spectrum shows a fine structure consisting of emission modes attributed to the multimodal QDs size distribution. Temperature-dependent PL reveals negligible carrier transfer among QDs, suggesting good carrier confinement confirmed by theoretical calculations and the TRPL experiment. The PL intensity quench and related energies imply the presence of carrier losses among InP barrier states before carrier capture by QD states. The TRPL experiment highlighted the role of the carrier reservoir in InP. The elongation of PL rise time with temperature imply inefficient carrier capture from the reservoir to QDs. The TRPL experiment at [Formula: see text] reveals the existence of two PL decay components with strong dispersion across the emission spectrum. The decay times dispersion is attributed to different electron-hole confinement regimes for the studied QDs within their broad distribution affected by the size and chemical content inhomogeneities. |
format | Online Article Text |
id | pubmed-7830905 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-78309052021-01-26 Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography Holewa, Paweł Jasiński, Jakub Shikin, Artem Lebedkina, Elizaveta Maryński, Aleksander Syperek, Marcin Semenova, Elizaveta Materials (Basel) Article The InAs/InP quantum dots (QDs) are investigated by time-integrated (PL) and time-resolved photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet epitaxy technique using block copolymer lithography. The estimated QDs surface density is ∼1.5 × 10(10) cm(−2). The PL emission at [Formula: see text] is centered at 1.5 μm. Below [Formula: see text] , the PL spectrum shows a fine structure consisting of emission modes attributed to the multimodal QDs size distribution. Temperature-dependent PL reveals negligible carrier transfer among QDs, suggesting good carrier confinement confirmed by theoretical calculations and the TRPL experiment. The PL intensity quench and related energies imply the presence of carrier losses among InP barrier states before carrier capture by QD states. The TRPL experiment highlighted the role of the carrier reservoir in InP. The elongation of PL rise time with temperature imply inefficient carrier capture from the reservoir to QDs. The TRPL experiment at [Formula: see text] reveals the existence of two PL decay components with strong dispersion across the emission spectrum. The decay times dispersion is attributed to different electron-hole confinement regimes for the studied QDs within their broad distribution affected by the size and chemical content inhomogeneities. MDPI 2021-01-14 /pmc/articles/PMC7830905/ /pubmed/33466881 http://dx.doi.org/10.3390/ma14020391 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Holewa, Paweł Jasiński, Jakub Shikin, Artem Lebedkina, Elizaveta Maryński, Aleksander Syperek, Marcin Semenova, Elizaveta Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography |
title | Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography |
title_full | Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography |
title_fullStr | Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography |
title_full_unstemmed | Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography |
title_short | Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography |
title_sort | optical properties of site-selectively grown inas/inp quantum dots with predefined positioning by block copolymer lithography |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7830905/ https://www.ncbi.nlm.nih.gov/pubmed/33466881 http://dx.doi.org/10.3390/ma14020391 |
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