Cargando…
Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography
The InAs/InP quantum dots (QDs) are investigated by time-integrated (PL) and time-resolved photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet epitaxy technique using block copolymer lithography. The estimated QDs surface density is ∼1.5 × 10(10) cm(−2). The PL e...
Autores principales: | Holewa, Paweł, Jasiński, Jakub, Shikin, Artem, Lebedkina, Elizaveta, Maryński, Aleksander, Syperek, Marcin, Semenova, Elizaveta |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7830905/ https://www.ncbi.nlm.nih.gov/pubmed/33466881 http://dx.doi.org/10.3390/ma14020391 |
Ejemplares similares
-
Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire
Quantum Dots
por: Sadre Momtaz, Zahra, et al.
Publicado: (2020) -
Bright Quantum Dot Single-Photon Emitters at Telecom
Bands Heterogeneously Integrated on Si
por: Holewa, Paweł, et al.
Publicado: (2022) -
Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots
por: Cornia, Samuele, et al.
Publicado: (2019) -
Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
por: Smołka, Tristan, et al.
Publicado: (2021) -
Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dots
por: Zieliński, Michał
Publicado: (2012)