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Freestanding Nanolayers of a Wide‐Gap Topological Insulator through Liquid‐Phase Exfoliation

The layered salt Bi(14)Rh(3)I(9) is a weak three‐dimensional (3D) topological insulator (TI), that is, a stack of two‐dimensional (2D) TIs. It has a wide non‐trivial band gap of 210 meV, which is generated by strong spin‐orbit coupling, and possesses protected electronic edge‐states. In the structur...

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Autores principales: Lê Anh, Mai, Potapov, Pavel, Wolf, Daniel, Lubk, Axel, Glatz, Bernhard, Fery, Andreas, Doert, Thomas, Ruck, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7839554/
https://www.ncbi.nlm.nih.gov/pubmed/33125781
http://dx.doi.org/10.1002/chem.202004320
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author Lê Anh, Mai
Potapov, Pavel
Wolf, Daniel
Lubk, Axel
Glatz, Bernhard
Fery, Andreas
Doert, Thomas
Ruck, Michael
author_facet Lê Anh, Mai
Potapov, Pavel
Wolf, Daniel
Lubk, Axel
Glatz, Bernhard
Fery, Andreas
Doert, Thomas
Ruck, Michael
author_sort Lê Anh, Mai
collection PubMed
description The layered salt Bi(14)Rh(3)I(9) is a weak three‐dimensional (3D) topological insulator (TI), that is, a stack of two‐dimensional (2D) TIs. It has a wide non‐trivial band gap of 210 meV, which is generated by strong spin‐orbit coupling, and possesses protected electronic edge‐states. In the structure, charged layers of [Formula: see text] (Bi(4)Rh)(3)I](2+) honeycombs and [Formula: see text] Bi(2)I(8)](2−) chains alternate. The non‐trivial topology of Bi(14)Rh(3)I(9) is an inherent property of the 2D intermetallic fragment. Here, the exfoliation of Bi(14)Rh(3)I(9) was performed using two different chemical approaches: (a) through a reaction with n‐butyllithium and poly(vinylpyrrolidone), (b) through a reaction with betaine in dimethylformamide at 55 °C. The former yielded few‐layer sheets of the new compound Bi(12)Rh(3)I, while the latter led to crystalline sheets of Bi(14)Rh(3)I(9) with a thickness down to 5 nm and edge‐lengths up to several ten microns. X‐ray diffraction and electron microscopy proved that the structure of Bi(14)Rh(3)I(9) remained intact. Thus, it was assumed that the particles are still TIs. Dispersions of these flakes now allow for next steps towards the envisioned applications in nanoelectronics, such as the study of quantum coherence in deposited films, the combination with superconducting particles or films for the generation of Majorana fermions, or studies on their behavior under the influence of magnetic or electric fields or in contact with various materials occurring in devices. The method presented generally allows to exfoliate layers with high specific charges and thus the use of layered starting materials beyond van der Waals crystals.
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spelling pubmed-78395542021-02-01 Freestanding Nanolayers of a Wide‐Gap Topological Insulator through Liquid‐Phase Exfoliation Lê Anh, Mai Potapov, Pavel Wolf, Daniel Lubk, Axel Glatz, Bernhard Fery, Andreas Doert, Thomas Ruck, Michael Chemistry Full Papers The layered salt Bi(14)Rh(3)I(9) is a weak three‐dimensional (3D) topological insulator (TI), that is, a stack of two‐dimensional (2D) TIs. It has a wide non‐trivial band gap of 210 meV, which is generated by strong spin‐orbit coupling, and possesses protected electronic edge‐states. In the structure, charged layers of [Formula: see text] (Bi(4)Rh)(3)I](2+) honeycombs and [Formula: see text] Bi(2)I(8)](2−) chains alternate. The non‐trivial topology of Bi(14)Rh(3)I(9) is an inherent property of the 2D intermetallic fragment. Here, the exfoliation of Bi(14)Rh(3)I(9) was performed using two different chemical approaches: (a) through a reaction with n‐butyllithium and poly(vinylpyrrolidone), (b) through a reaction with betaine in dimethylformamide at 55 °C. The former yielded few‐layer sheets of the new compound Bi(12)Rh(3)I, while the latter led to crystalline sheets of Bi(14)Rh(3)I(9) with a thickness down to 5 nm and edge‐lengths up to several ten microns. X‐ray diffraction and electron microscopy proved that the structure of Bi(14)Rh(3)I(9) remained intact. Thus, it was assumed that the particles are still TIs. Dispersions of these flakes now allow for next steps towards the envisioned applications in nanoelectronics, such as the study of quantum coherence in deposited films, the combination with superconducting particles or films for the generation of Majorana fermions, or studies on their behavior under the influence of magnetic or electric fields or in contact with various materials occurring in devices. The method presented generally allows to exfoliate layers with high specific charges and thus the use of layered starting materials beyond van der Waals crystals. John Wiley and Sons Inc. 2020-12-04 2021-01-07 /pmc/articles/PMC7839554/ /pubmed/33125781 http://dx.doi.org/10.1002/chem.202004320 Text en © 2020 The Authors. Chemistry - A European Journal published by Wiley-VCH GmbH This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Full Papers
Lê Anh, Mai
Potapov, Pavel
Wolf, Daniel
Lubk, Axel
Glatz, Bernhard
Fery, Andreas
Doert, Thomas
Ruck, Michael
Freestanding Nanolayers of a Wide‐Gap Topological Insulator through Liquid‐Phase Exfoliation
title Freestanding Nanolayers of a Wide‐Gap Topological Insulator through Liquid‐Phase Exfoliation
title_full Freestanding Nanolayers of a Wide‐Gap Topological Insulator through Liquid‐Phase Exfoliation
title_fullStr Freestanding Nanolayers of a Wide‐Gap Topological Insulator through Liquid‐Phase Exfoliation
title_full_unstemmed Freestanding Nanolayers of a Wide‐Gap Topological Insulator through Liquid‐Phase Exfoliation
title_short Freestanding Nanolayers of a Wide‐Gap Topological Insulator through Liquid‐Phase Exfoliation
title_sort freestanding nanolayers of a wide‐gap topological insulator through liquid‐phase exfoliation
topic Full Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7839554/
https://www.ncbi.nlm.nih.gov/pubmed/33125781
http://dx.doi.org/10.1002/chem.202004320
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