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Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness and Porod’s law
Small-angle X-ray scattering from GaN nanowires grown on Si(111) is measured in the grazing-incidence geometry and modelled by means of a Monte Carlo simulation that takes into account the orientational distribution of the faceted nanowires and the roughness of their side facets. It is found that th...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7842208/ https://www.ncbi.nlm.nih.gov/pubmed/33399130 http://dx.doi.org/10.1107/S205327332001548X |