Charge transport mechanism in the forming-free memristor based on silicon nitride

Nonstoichiometric silicon nitride SiN(x) is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a...

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Detalles Bibliográficos
Autores principales: Gismatulin, Andrei A., Kamaev, Gennadiy N., Kruchinin, Vladimir N., Gritsenko, Vladimir A., Orlov, Oleg M., Chin, Albert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7843651/
https://www.ncbi.nlm.nih.gov/pubmed/33510310
http://dx.doi.org/10.1038/s41598-021-82159-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7843651/
https://www.ncbi.nlm.nih.gov/pubmed/33510310
http://dx.doi.org/10.1038/s41598-021-82159-7

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