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Charge transport mechanism in the forming-free memristor based on silicon nitride
Nonstoichiometric silicon nitride SiN(x) is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7843651/ https://www.ncbi.nlm.nih.gov/pubmed/33510310 http://dx.doi.org/10.1038/s41598-021-82159-7 |