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Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence

Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated with controllable diameters and lengths. Their photoconductive properties are investigated by photoconductive atomic force microscopy (PCAFM) on individual nanowires. The results show that the photocu...

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Autores principales: Hu, Xiaofeng, Li, Shujie, Jiang, Zuimin, Yang, Xinju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7843832/
https://www.ncbi.nlm.nih.gov/pubmed/33511480
http://dx.doi.org/10.1186/s11671-021-03487-1
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author Hu, Xiaofeng
Li, Shujie
Jiang, Zuimin
Yang, Xinju
author_facet Hu, Xiaofeng
Li, Shujie
Jiang, Zuimin
Yang, Xinju
author_sort Hu, Xiaofeng
collection PubMed
description Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated with controllable diameters and lengths. Their photoconductive properties are investigated by photoconductive atomic force microscopy (PCAFM) on individual nanowires. The results show that the photocurrent of Si NWs increases significantly with the laser intensity, indicating that Si NWs have good photoconductance and photoresponse capability. This photoenhanced conductance can be attributed to the photoinduced Schottky barrier change, confirmed by I–V curve analyses. On the other hand, electrostatic force microscopy (EFM) results indicate that a large number of photogenerated charges are trapped in Si NWs under laser irradiation, leading to the lowering of barrier height. Moreover, the size dependence of photoconductive properties is studied on Si NWs with different diameters and lengths. It is found that the increasing magnitude of photocurrent with laser intensity is greatly relevant to the nanowires’ diameter and length. Si NWs with smaller diameters and shorter lengths display better photoconductive properties, which agrees well with the size-dependent barrier height variation induced by photogenerated charges. With optimized diameter and length, great photoelectrical properties are achieved on Si NWs. Overall, in this study the photoelectrical properties of individual Si NWs are systematically investigated by PCAFM and EFM, providing important information for the optimization of nanostructures for practical applications.
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spelling pubmed-78438322021-02-04 Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence Hu, Xiaofeng Li, Shujie Jiang, Zuimin Yang, Xinju Nanoscale Res Lett Nano Express Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated with controllable diameters and lengths. Their photoconductive properties are investigated by photoconductive atomic force microscopy (PCAFM) on individual nanowires. The results show that the photocurrent of Si NWs increases significantly with the laser intensity, indicating that Si NWs have good photoconductance and photoresponse capability. This photoenhanced conductance can be attributed to the photoinduced Schottky barrier change, confirmed by I–V curve analyses. On the other hand, electrostatic force microscopy (EFM) results indicate that a large number of photogenerated charges are trapped in Si NWs under laser irradiation, leading to the lowering of barrier height. Moreover, the size dependence of photoconductive properties is studied on Si NWs with different diameters and lengths. It is found that the increasing magnitude of photocurrent with laser intensity is greatly relevant to the nanowires’ diameter and length. Si NWs with smaller diameters and shorter lengths display better photoconductive properties, which agrees well with the size-dependent barrier height variation induced by photogenerated charges. With optimized diameter and length, great photoelectrical properties are achieved on Si NWs. Overall, in this study the photoelectrical properties of individual Si NWs are systematically investigated by PCAFM and EFM, providing important information for the optimization of nanostructures for practical applications. Springer US 2021-01-28 /pmc/articles/PMC7843832/ /pubmed/33511480 http://dx.doi.org/10.1186/s11671-021-03487-1 Text en © The Author(s) 2021 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Hu, Xiaofeng
Li, Shujie
Jiang, Zuimin
Yang, Xinju
Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence
title Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence
title_full Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence
title_fullStr Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence
title_full_unstemmed Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence
title_short Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence
title_sort photoelectrical properties investigated on individual si nanowires and their size dependence
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7843832/
https://www.ncbi.nlm.nih.gov/pubmed/33511480
http://dx.doi.org/10.1186/s11671-021-03487-1
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AT jiangzuimin photoelectricalpropertiesinvestigatedonindividualsinanowiresandtheirsizedependence
AT yangxinju photoelectricalpropertiesinvestigatedonindividualsinanowiresandtheirsizedependence