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An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
In lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a...
Autores principales: | Liu, Shun-Chang, Dai, Chen-Min, Min, Yimeng, Hou, Yi, Proppe, Andrew H., Zhou, Ying, Chen, Chao, Chen, Shiyou, Tang, Jiang, Xue, Ding-Jiang, Sargent, Edward H., Hu, Jin-Song |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7844217/ https://www.ncbi.nlm.nih.gov/pubmed/33510157 http://dx.doi.org/10.1038/s41467-021-20955-5 |
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