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Quantum frequency doubling in the topological insulator Bi(2)Se(3)

The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi(2)Se(3) under zero magnetic...

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Autores principales: He, Pan, Isobe, Hiroki, Zhu, Dapeng, Hsu, Chuang-Han, Fu, Liang, Yang, Hyunsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7846578/
https://www.ncbi.nlm.nih.gov/pubmed/33514744
http://dx.doi.org/10.1038/s41467-021-20983-1
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author He, Pan
Isobe, Hiroki
Zhu, Dapeng
Hsu, Chuang-Han
Fu, Liang
Yang, Hyunsoo
author_facet He, Pan
Isobe, Hiroki
Zhu, Dapeng
Hsu, Chuang-Han
Fu, Liang
Yang, Hyunsoo
author_sort He, Pan
collection PubMed
description The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi(2)Se(3) under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit.
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spelling pubmed-78465782021-02-08 Quantum frequency doubling in the topological insulator Bi(2)Se(3) He, Pan Isobe, Hiroki Zhu, Dapeng Hsu, Chuang-Han Fu, Liang Yang, Hyunsoo Nat Commun Article The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi(2)Se(3) under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit. Nature Publishing Group UK 2021-01-29 /pmc/articles/PMC7846578/ /pubmed/33514744 http://dx.doi.org/10.1038/s41467-021-20983-1 Text en © The Author(s) 2021 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
He, Pan
Isobe, Hiroki
Zhu, Dapeng
Hsu, Chuang-Han
Fu, Liang
Yang, Hyunsoo
Quantum frequency doubling in the topological insulator Bi(2)Se(3)
title Quantum frequency doubling in the topological insulator Bi(2)Se(3)
title_full Quantum frequency doubling in the topological insulator Bi(2)Se(3)
title_fullStr Quantum frequency doubling in the topological insulator Bi(2)Se(3)
title_full_unstemmed Quantum frequency doubling in the topological insulator Bi(2)Se(3)
title_short Quantum frequency doubling in the topological insulator Bi(2)Se(3)
title_sort quantum frequency doubling in the topological insulator bi(2)se(3)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7846578/
https://www.ncbi.nlm.nih.gov/pubmed/33514744
http://dx.doi.org/10.1038/s41467-021-20983-1
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