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Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)
Metal-semiconductor transitions from changes in edge chirality from zigzag to armchair were observed in many nanoribbon materials, especially those based on honeycomb lattices. Here, this is generalized to bulk complex Zintl semiconductors, exemplified by Eu(2)ZnSb(2) where the Zn vacancy ordering p...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7864570/ https://www.ncbi.nlm.nih.gov/pubmed/33547075 http://dx.doi.org/10.1126/sciadv.abd6162 |
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author | Yao, Honghao Chen, Chen Xue, Wenhua Bai, Fengxian Cao, Feng Lan, Yucheng Liu, Xingjun Wang, Yumei Singh, David J. Lin, Xi Zhang, Qian |
author_facet | Yao, Honghao Chen, Chen Xue, Wenhua Bai, Fengxian Cao, Feng Lan, Yucheng Liu, Xingjun Wang, Yumei Singh, David J. Lin, Xi Zhang, Qian |
author_sort | Yao, Honghao |
collection | PubMed |
description | Metal-semiconductor transitions from changes in edge chirality from zigzag to armchair were observed in many nanoribbon materials, especially those based on honeycomb lattices. Here, this is generalized to bulk complex Zintl semiconductors, exemplified by Eu(2)ZnSb(2) where the Zn vacancy ordering plays an essential role. Five Eu(2)ZnSb(2) structural models are proposed to guide transmission electron microscopy imaging. Zigzag vacancy ordering models show clear metallicity, while the armchair models are semiconducting with indirect bandgaps that monotonously increase with the relative distances between neighboring ZnSb(2) chains. Topological electronic structure changes based on cation ordering in a Zintl compound point toward tunable and possibly switchable topological behavior, since cations in these are often mobile. Thus, their orderings can often be adjusted by temperature, minor alloying, and other approaches. We explain the electronic structure of an interesting thermoelectric and point the way to previously unidentified types of topological electronic transitions in Zintl compounds. |
format | Online Article Text |
id | pubmed-7864570 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-78645702021-02-16 Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2) Yao, Honghao Chen, Chen Xue, Wenhua Bai, Fengxian Cao, Feng Lan, Yucheng Liu, Xingjun Wang, Yumei Singh, David J. Lin, Xi Zhang, Qian Sci Adv Research Articles Metal-semiconductor transitions from changes in edge chirality from zigzag to armchair were observed in many nanoribbon materials, especially those based on honeycomb lattices. Here, this is generalized to bulk complex Zintl semiconductors, exemplified by Eu(2)ZnSb(2) where the Zn vacancy ordering plays an essential role. Five Eu(2)ZnSb(2) structural models are proposed to guide transmission electron microscopy imaging. Zigzag vacancy ordering models show clear metallicity, while the armchair models are semiconducting with indirect bandgaps that monotonously increase with the relative distances between neighboring ZnSb(2) chains. Topological electronic structure changes based on cation ordering in a Zintl compound point toward tunable and possibly switchable topological behavior, since cations in these are often mobile. Thus, their orderings can often be adjusted by temperature, minor alloying, and other approaches. We explain the electronic structure of an interesting thermoelectric and point the way to previously unidentified types of topological electronic transitions in Zintl compounds. American Association for the Advancement of Science 2021-02-05 /pmc/articles/PMC7864570/ /pubmed/33547075 http://dx.doi.org/10.1126/sciadv.abd6162 Text en Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). https://creativecommons.org/licenses/by-nc/4.0/ https://creativecommons.org/licenses/by-nc/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Yao, Honghao Chen, Chen Xue, Wenhua Bai, Fengxian Cao, Feng Lan, Yucheng Liu, Xingjun Wang, Yumei Singh, David J. Lin, Xi Zhang, Qian Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2) |
title | Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2) |
title_full | Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2) |
title_fullStr | Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2) |
title_full_unstemmed | Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2) |
title_short | Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2) |
title_sort | vacancy ordering induced topological electronic transition in bulk eu(2)znsb(2) |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7864570/ https://www.ncbi.nlm.nih.gov/pubmed/33547075 http://dx.doi.org/10.1126/sciadv.abd6162 |
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