Cargando…

Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)

Metal-semiconductor transitions from changes in edge chirality from zigzag to armchair were observed in many nanoribbon materials, especially those based on honeycomb lattices. Here, this is generalized to bulk complex Zintl semiconductors, exemplified by Eu(2)ZnSb(2) where the Zn vacancy ordering p...

Descripción completa

Detalles Bibliográficos
Autores principales: Yao, Honghao, Chen, Chen, Xue, Wenhua, Bai, Fengxian, Cao, Feng, Lan, Yucheng, Liu, Xingjun, Wang, Yumei, Singh, David J., Lin, Xi, Zhang, Qian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7864570/
https://www.ncbi.nlm.nih.gov/pubmed/33547075
http://dx.doi.org/10.1126/sciadv.abd6162
_version_ 1783647686597017600
author Yao, Honghao
Chen, Chen
Xue, Wenhua
Bai, Fengxian
Cao, Feng
Lan, Yucheng
Liu, Xingjun
Wang, Yumei
Singh, David J.
Lin, Xi
Zhang, Qian
author_facet Yao, Honghao
Chen, Chen
Xue, Wenhua
Bai, Fengxian
Cao, Feng
Lan, Yucheng
Liu, Xingjun
Wang, Yumei
Singh, David J.
Lin, Xi
Zhang, Qian
author_sort Yao, Honghao
collection PubMed
description Metal-semiconductor transitions from changes in edge chirality from zigzag to armchair were observed in many nanoribbon materials, especially those based on honeycomb lattices. Here, this is generalized to bulk complex Zintl semiconductors, exemplified by Eu(2)ZnSb(2) where the Zn vacancy ordering plays an essential role. Five Eu(2)ZnSb(2) structural models are proposed to guide transmission electron microscopy imaging. Zigzag vacancy ordering models show clear metallicity, while the armchair models are semiconducting with indirect bandgaps that monotonously increase with the relative distances between neighboring ZnSb(2) chains. Topological electronic structure changes based on cation ordering in a Zintl compound point toward tunable and possibly switchable topological behavior, since cations in these are often mobile. Thus, their orderings can often be adjusted by temperature, minor alloying, and other approaches. We explain the electronic structure of an interesting thermoelectric and point the way to previously unidentified types of topological electronic transitions in Zintl compounds.
format Online
Article
Text
id pubmed-7864570
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher American Association for the Advancement of Science
record_format MEDLINE/PubMed
spelling pubmed-78645702021-02-16 Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2) Yao, Honghao Chen, Chen Xue, Wenhua Bai, Fengxian Cao, Feng Lan, Yucheng Liu, Xingjun Wang, Yumei Singh, David J. Lin, Xi Zhang, Qian Sci Adv Research Articles Metal-semiconductor transitions from changes in edge chirality from zigzag to armchair were observed in many nanoribbon materials, especially those based on honeycomb lattices. Here, this is generalized to bulk complex Zintl semiconductors, exemplified by Eu(2)ZnSb(2) where the Zn vacancy ordering plays an essential role. Five Eu(2)ZnSb(2) structural models are proposed to guide transmission electron microscopy imaging. Zigzag vacancy ordering models show clear metallicity, while the armchair models are semiconducting with indirect bandgaps that monotonously increase with the relative distances between neighboring ZnSb(2) chains. Topological electronic structure changes based on cation ordering in a Zintl compound point toward tunable and possibly switchable topological behavior, since cations in these are often mobile. Thus, their orderings can often be adjusted by temperature, minor alloying, and other approaches. We explain the electronic structure of an interesting thermoelectric and point the way to previously unidentified types of topological electronic transitions in Zintl compounds. American Association for the Advancement of Science 2021-02-05 /pmc/articles/PMC7864570/ /pubmed/33547075 http://dx.doi.org/10.1126/sciadv.abd6162 Text en Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). https://creativecommons.org/licenses/by-nc/4.0/ https://creativecommons.org/licenses/by-nc/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Yao, Honghao
Chen, Chen
Xue, Wenhua
Bai, Fengxian
Cao, Feng
Lan, Yucheng
Liu, Xingjun
Wang, Yumei
Singh, David J.
Lin, Xi
Zhang, Qian
Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)
title Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)
title_full Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)
title_fullStr Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)
title_full_unstemmed Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)
title_short Vacancy ordering induced topological electronic transition in bulk Eu(2)ZnSb(2)
title_sort vacancy ordering induced topological electronic transition in bulk eu(2)znsb(2)
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7864570/
https://www.ncbi.nlm.nih.gov/pubmed/33547075
http://dx.doi.org/10.1126/sciadv.abd6162
work_keys_str_mv AT yaohonghao vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT chenchen vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT xuewenhua vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT baifengxian vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT caofeng vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT lanyucheng vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT liuxingjun vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT wangyumei vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT singhdavidj vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT linxi vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2
AT zhangqian vacancyorderinginducedtopologicalelectronictransitioninbulkeu2znsb2