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The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabri...

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Detalles Bibliográficos
Autores principales:	Xu, Hongyi, Ren, Na, Wu, Jiupeng, Zhu, Zhengyun, Guo, Qing, Sheng, Kuang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7867016/ https://www.ncbi.nlm.nih.gov/pubmed/33572683 http://dx.doi.org/10.3390/ma14030663

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