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4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase the hardness of the recovery process, and improve th...

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Detalles Bibliográficos
Autores principales:	Yan, Xiaoxue, Liang, Lin, Huang, Xinyuan, Zhong, Heqing, Yang, Zewei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7867219/ https://www.ncbi.nlm.nih.gov/pubmed/33540734 http://dx.doi.org/10.3390/ma14030684

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