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Influence of Gas Annealing on Sensitivity of AlN/4H-SiC-Based Temperature Sensors

In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by anneal...

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Detalles Bibliográficos
Autores principales:	Jung, Seung-Woo, Shin, Myeong-Cheol, Schweitz, Michael A., Oh, Jong-Min, Koo, Sang-Mo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7867292/ https://www.ncbi.nlm.nih.gov/pubmed/33540719 http://dx.doi.org/10.3390/ma14030683

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