Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs

In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga(2)O(3) MOSFETs with native or high-thermal-conductivity substrates. The thermal conductivity of Ga(2)O(3) is anisotropic and decreases significantly with increasing temperature, which both are important for the thermal behavior of Ga(2)O(3) MOSFETs and thus considered in the model. Numerical simulations are performed via COMSOL Multiphysics to investigate the dependence of channel maximum temperature on power density by varying device geometric parameters and ambient temperature, which shows good agreements with analytical model, providing the validity of this model. The new model is instructive in effective thermal management of Ga(2)O(3) MOSFETs.