Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs

In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga(2)O(3) MOSFETs with native or high-thermal-conductivity substrates. The thermal conductivity of Ga(2)O(3) is anisotropic and decreases significantly with increasing temperature, which b...

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Detalles Bibliográficos
Autores principales: Jia, Xiaole, Hu, Haodong, Han, Genquan, Liu, Yan, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7876208/
https://www.ncbi.nlm.nih.gov/pubmed/33569659
http://dx.doi.org/10.1186/s11671-021-03490-6
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author Jia, Xiaole
Hu, Haodong
Han, Genquan
Liu, Yan
Hao, Yue
author_facet Jia, Xiaole
Hu, Haodong
Han, Genquan
Liu, Yan
Hao, Yue
author_sort Jia, Xiaole
collection PubMed
description In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga(2)O(3) MOSFETs with native or high-thermal-conductivity substrates. The thermal conductivity of Ga(2)O(3) is anisotropic and decreases significantly with increasing temperature, which both are important for the thermal behavior of Ga(2)O(3) MOSFETs and thus considered in the model. Numerical simulations are performed via COMSOL Multiphysics to investigate the dependence of channel maximum temperature on power density by varying device geometric parameters and ambient temperature, which shows good agreements with analytical model, providing the validity of this model. The new model is instructive in effective thermal management of Ga(2)O(3) MOSFETs.
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spelling pubmed-78762082021-02-24 Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs Jia, Xiaole Hu, Haodong Han, Genquan Liu, Yan Hao, Yue Nanoscale Res Lett Nano Express In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga(2)O(3) MOSFETs with native or high-thermal-conductivity substrates. The thermal conductivity of Ga(2)O(3) is anisotropic and decreases significantly with increasing temperature, which both are important for the thermal behavior of Ga(2)O(3) MOSFETs and thus considered in the model. Numerical simulations are performed via COMSOL Multiphysics to investigate the dependence of channel maximum temperature on power density by varying device geometric parameters and ambient temperature, which shows good agreements with analytical model, providing the validity of this model. The new model is instructive in effective thermal management of Ga(2)O(3) MOSFETs. Springer US 2021-02-10 /pmc/articles/PMC7876208/ /pubmed/33569659 http://dx.doi.org/10.1186/s11671-021-03490-6 Text en © The Author(s) 2021 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Jia, Xiaole
Hu, Haodong
Han, Genquan
Liu, Yan
Hao, Yue
Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
title Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
title_full Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
title_fullStr Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
title_full_unstemmed Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
title_short Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
title_sort analytical model for the channel maximum temperature in ga(2)o(3) mosfets
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7876208/
https://www.ncbi.nlm.nih.gov/pubmed/33569659
http://dx.doi.org/10.1186/s11671-021-03490-6
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