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Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga(2)O(3) MOSFETs with native or high-thermal-conductivity substrates. The thermal conductivity of Ga(2)O(3) is anisotropic and decreases significantly with increasing temperature, which b...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7876208/ https://www.ncbi.nlm.nih.gov/pubmed/33569659 http://dx.doi.org/10.1186/s11671-021-03490-6 |