Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place the...

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Detalles Bibliográficos
Autores principales: Pavunny, Shojan P., Yeats, Andrew L., Banks, Hunter B., Bielejec, Edward, Myers-Ward, Rachael L., DeJarld, Matthew T., Bracker, Allan S., Gaskill, D. Kurt, Carter, Samuel G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7878855/
https://www.ncbi.nlm.nih.gov/pubmed/33574463
http://dx.doi.org/10.1038/s41598-021-82832-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7878855/
https://www.ncbi.nlm.nih.gov/pubmed/33574463
http://dx.doi.org/10.1038/s41598-021-82832-x

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