Cargando…

Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment

2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate‐induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The stu...

Descripción completa

Detalles Bibliográficos
Autores principales:	Yan, Yong, Li, Shasha, Du, Juan, Yang, Huai, Wang, Xiaoting, Song, Xiaohui, Li, Lixia, Li, Xueping, Xia, Congxin, Liu, Yufang, Li, Jingbo, Wei, Zhongming
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2021
Materias:	Full Papers
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7887575/ https://www.ncbi.nlm.nih.gov/pubmed/33643781 http://dx.doi.org/10.1002/advs.201903252

Ejemplares similares

Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe
por: Yao, Xiaojing, et al.
Publicado: (2021)

Atomically thin photoanode of InSe/graphene heterostructure
por: Zheng, Haihong, et al.
Publicado: (2021)

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
por: Zhang, Yadong, et al.
Publicado: (2021)

The synthesis of competing phase GeSe and GeSe(2) 2D layered materials
por: Yumigeta, Kentaro, et al.
Publicado: (2020)

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure
por: Li, Jialin, et al.
Publicado: (2022)

High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures
por: Mudd, Garry W., et al.
Publicado: (2015)

2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics
por: Shu, Yiqing, et al.
Publicado: (2022)

Tunable Gain SnS(2)/InSe Van der Waals Heterostructure Photodetector
por: Hosseini, Seyedali, et al.
Publicado: (2022)

Two-dimensional wide-bandgap GeSe(2) vertical ultraviolet photodetectors with high responsivity and ultrafast response speed
por: Yan, Yong, et al.
Publicado: (2022)

Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance
por: Huang, Xingyong, et al.
Publicado: (2022)

Thermoelectric Performance of Na-Doped GeSe
por: Shaabani, Laaya, et al.
Publicado: (2017)

Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
por: Osiekowicz, M., et al.
Publicado: (2021)

Strain Effect on Thermoelectric Performance of InSe Monolayer
por: Wang, Qian, et al.
Publicado: (2019)

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity
por: Zhou, Xing, et al.
Publicado: (2018)

Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
por: Cho, Sang-Hoo, et al.
Publicado: (2021)

Strain-engineering the electronic properties and anisotropy of GeSe(2) monolayers
por: Li, Zongbao, et al.
Publicado: (2018)

InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening
por: Ma, Zechen, et al.
Publicado: (2021)

Weak Interlayer Interaction in 2D Anisotropic GeSe(2)
por: Yang, Yusi, et al.
Publicado: (2018)

Short-range order of compressed amorphous GeSe(2)
por: Properzi, L., et al.
Publicado: (2015)

Thermoelectric performances for both p- and n-type GeSe
por: Fan, Qiang, et al.
Publicado: (2021)

An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
por: Liu, Shun-Chang, et al.
Publicado: (2021)

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
por: Xiao, Xian-Bo, et al.
Publicado: (2019)

'Cold' crystallization in nanostructurized 80GeSe(2)-20Ga(2)Se(3) glass
por: Klym, Halyna, et al.
Publicado: (2015)

Simulation of highly efficient GeSe-based solar cells with SCAPS-1D
por: Huang, Zhi-Ping, et al.
Publicado: (2023)

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
por: Mudd, Garry W, et al.
Publicado: (2013)

Electronic Structure and I-V Characteristics of InSe Nanoribbons
por: Yao, A-Long, et al.
Publicado: (2018)

Monte Carlo Study of Electronic Transport in Monolayer InSe
por: Gopalan, Sanjay, et al.
Publicado: (2019)

Exceptional Thermoelectric Properties of Bilayer GeSe: First Principles Calculation
por: Fan, Qiang, et al.
Publicado: (2022)

The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI(2) Heterostructures
por: Lin, Yifeng, et al.
Publicado: (2020)

The Interaction of Hydrogen with the van der Waals Crystal γ-InSe
por: Felton, James, et al.
Publicado: (2020)

Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties
por: Sang, David K., et al.
Publicado: (2019)

Composition dependent structural phase transition and optical band gap tuning in InSe thin films
por: Singh, Harpreet, et al.
Publicado: (2019)

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
por: Beardsley, Ryan, et al.
Publicado: (2016)

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
por: Guo, Zhinan, et al.
Publicado: (2021)

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor
por: Sui, Fengrui, et al.
Publicado: (2023)

Revealing the origin of PL evolution of InSe flake induced by laser irradiation
por: Wang, Jing, et al.
Publicado: (2023)

Lattice Thermal Conductivity of Monolayer InSe Calculated by Machine Learning Potential
por: Han, Jinsen, et al.
Publicado: (2023)

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection
por: Hussain, Muhammad, et al.
Publicado: (2020)

Tailoring phononic, electronic, and thermoelectric properties of orthorhombic GeSe through hydrostatic pressure
por: Yuan, Kunpeng, et al.
Publicado: (2019)

p-MoS(2)/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices
por: Li, Pan, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_m4li96af8hs24mh5nn74v734ng