Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

[Image: see text] The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) sil...

Descripción completa

Detalles Bibliográficos
Autores principales: Ghosh, Saptarsi, Hinz, Alexander, Fairclough, Simon M., Spiridon, Bogdan F., Eblabla, Abdalla, Casbon, Michael A., Kappers, Menno J., Elgaid, Khaled, Alam, Saiful, Oliver, Rachel A., Wallis, David J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7906019/
https://www.ncbi.nlm.nih.gov/pubmed/33644761
http://dx.doi.org/10.1021/acsaelm.0c00966

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7906019/
https://www.ncbi.nlm.nih.gov/pubmed/33644761
http://dx.doi.org/10.1021/acsaelm.0c00966

Ejemplares similares