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Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

[Image: see text] The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) sil...

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Detalles Bibliográficos
Autores principales:	Ghosh, Saptarsi, Hinz, Alexander, Fairclough, Simon M., Spiridon, Bogdan F., Eblabla, Abdalla, Casbon, Michael A., Kappers, Menno J., Elgaid, Khaled, Alam, Saiful, Oliver, Rachel A., Wallis, David J.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2021
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7906019/ https://www.ncbi.nlm.nih.gov/pubmed/33644761 http://dx.doi.org/10.1021/acsaelm.0c00966

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