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The intrinsically disordered N-terminus of the voltage-dependent anion channel

The voltage-dependent anion channel (VDAC) is a critical β-barrel membrane protein of the mitochondrial outer membrane, which regulates the transport of ions and ATP between mitochondria and the cytoplasm. In addition, VDAC plays a central role in the control of apoptosis and is therefore of great i...

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Autores principales: Preto, Jordane, Krimm, Isabelle
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7906469/
https://www.ncbi.nlm.nih.gov/pubmed/33577583
http://dx.doi.org/10.1371/journal.pcbi.1008750
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author Preto, Jordane
Krimm, Isabelle
author_facet Preto, Jordane
Krimm, Isabelle
author_sort Preto, Jordane
collection PubMed
description The voltage-dependent anion channel (VDAC) is a critical β-barrel membrane protein of the mitochondrial outer membrane, which regulates the transport of ions and ATP between mitochondria and the cytoplasm. In addition, VDAC plays a central role in the control of apoptosis and is therefore of great interest in both cancer and neurodegenerative diseases. Although not fully understood, it is presumed that the gating mechanism of VDAC is governed by its N-terminal region which, in the open state of the channel, exhibits an α-helical structure positioned midway inside the pore and strongly interacting with the β-barrel wall. In the present work, we performed molecular simulations with a recently developed force field for disordered systems to shed new light on known experimental results, showing that the N-terminus of VDAC is an intrinsically disordered region (IDR). First, simulation of the N-terminal segment as a free peptide highlighted its disordered nature and the importance of using an IDR-specific force field to properly sample its conformational landscape. Secondly, accelerated dynamics simulation of a double cysteine VDAC mutant under applied voltage revealed metastable low conducting states of the channel representative of closed states observed experimentally. Related structures were characterized by partial unfolding and rearrangement of the N-terminal tail, that led to steric hindrance of the pore. Our results indicate that the disordered properties of the N-terminus are crucial to properly account for the gating mechanism of VDAC.
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spelling pubmed-79064692021-03-03 The intrinsically disordered N-terminus of the voltage-dependent anion channel Preto, Jordane Krimm, Isabelle PLoS Comput Biol Research Article The voltage-dependent anion channel (VDAC) is a critical β-barrel membrane protein of the mitochondrial outer membrane, which regulates the transport of ions and ATP between mitochondria and the cytoplasm. In addition, VDAC plays a central role in the control of apoptosis and is therefore of great interest in both cancer and neurodegenerative diseases. Although not fully understood, it is presumed that the gating mechanism of VDAC is governed by its N-terminal region which, in the open state of the channel, exhibits an α-helical structure positioned midway inside the pore and strongly interacting with the β-barrel wall. In the present work, we performed molecular simulations with a recently developed force field for disordered systems to shed new light on known experimental results, showing that the N-terminus of VDAC is an intrinsically disordered region (IDR). First, simulation of the N-terminal segment as a free peptide highlighted its disordered nature and the importance of using an IDR-specific force field to properly sample its conformational landscape. Secondly, accelerated dynamics simulation of a double cysteine VDAC mutant under applied voltage revealed metastable low conducting states of the channel representative of closed states observed experimentally. Related structures were characterized by partial unfolding and rearrangement of the N-terminal tail, that led to steric hindrance of the pore. Our results indicate that the disordered properties of the N-terminus are crucial to properly account for the gating mechanism of VDAC. Public Library of Science 2021-02-12 /pmc/articles/PMC7906469/ /pubmed/33577583 http://dx.doi.org/10.1371/journal.pcbi.1008750 Text en © 2021 Preto, Krimm http://creativecommons.org/licenses/by/4.0/ This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) , which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
spellingShingle Research Article
Preto, Jordane
Krimm, Isabelle
The intrinsically disordered N-terminus of the voltage-dependent anion channel
title The intrinsically disordered N-terminus of the voltage-dependent anion channel
title_full The intrinsically disordered N-terminus of the voltage-dependent anion channel
title_fullStr The intrinsically disordered N-terminus of the voltage-dependent anion channel
title_full_unstemmed The intrinsically disordered N-terminus of the voltage-dependent anion channel
title_short The intrinsically disordered N-terminus of the voltage-dependent anion channel
title_sort intrinsically disordered n-terminus of the voltage-dependent anion channel
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7906469/
https://www.ncbi.nlm.nih.gov/pubmed/33577583
http://dx.doi.org/10.1371/journal.pcbi.1008750
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