A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon

In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the average a...

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Detalles Bibliográficos
Autores principales: Mi, Guanyu, Lv, Jian, Que, Longcheng, Zhang, Yi, Zhou, Yun, Liu, Zhongyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7914334/
https://www.ncbi.nlm.nih.gov/pubmed/33638762
http://dx.doi.org/10.1186/s11671-021-03499-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7914334/
https://www.ncbi.nlm.nih.gov/pubmed/33638762
http://dx.doi.org/10.1186/s11671-021-03499-x

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