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Nanopatterning of Weak Links in Superconducting Oxide Interfaces

The interface between two wide band-gap insulators, LaAlO [Formula: see text] and SrTiO [Formula: see text] (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional supe...

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Detalles Bibliográficos
Autores principales: Singh, Gyanendra, Lesne, Edouard, Winkler, Dag, Claeson, Tord, Bauch, Thilo, Lombardi, Floriana, Caviglia, Andrea D., Kalaboukhov, Alexei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7914727/
https://www.ncbi.nlm.nih.gov/pubmed/33557305
http://dx.doi.org/10.3390/nano11020398
Descripción
Sumario:The interface between two wide band-gap insulators, LaAlO [Formula: see text] and SrTiO [Formula: see text] (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30–100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.