Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation an...

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Detalles Bibliográficos
Autores principales: Wang, Jie, Chen, Zhanfei, You, Shuzhen, Bakeroot, Benoit, Liu, Jun, Decoutere, Stefaan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918229/
https://www.ncbi.nlm.nih.gov/pubmed/33671856
http://dx.doi.org/10.3390/mi12020199
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author Wang, Jie
Chen, Zhanfei
You, Shuzhen
Bakeroot, Benoit
Liu, Jun
Decoutere, Stefaan
author_facet Wang, Jie
Chen, Zhanfei
You, Shuzhen
Bakeroot, Benoit
Liu, Jun
Decoutere, Stefaan
author_sort Wang, Jie
collection PubMed
description We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.
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spelling pubmed-79182292021-03-02 Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs Wang, Jie Chen, Zhanfei You, Shuzhen Bakeroot, Benoit Liu, Jun Decoutere, Stefaan Micromachines (Basel) Article We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code. MDPI 2021-02-15 /pmc/articles/PMC7918229/ /pubmed/33671856 http://dx.doi.org/10.3390/mi12020199 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Jie
Chen, Zhanfei
You, Shuzhen
Bakeroot, Benoit
Liu, Jun
Decoutere, Stefaan
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
title Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
title_full Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
title_fullStr Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
title_full_unstemmed Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
title_short Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
title_sort surface-potential-based compact modeling of p-gan gate hemts
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918229/
https://www.ncbi.nlm.nih.gov/pubmed/33671856
http://dx.doi.org/10.3390/mi12020199
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AT bakerootbenoit surfacepotentialbasedcompactmodelingofpgangatehemts
AT liujun surfacepotentialbasedcompactmodelingofpgangatehemts
AT decouterestefaan surfacepotentialbasedcompactmodelingofpgangatehemts

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