Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation an...

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Detalles Bibliográficos
Autores principales: Wang, Jie, Chen, Zhanfei, You, Shuzhen, Bakeroot, Benoit, Liu, Jun, Decoutere, Stefaan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918229/
https://www.ncbi.nlm.nih.gov/pubmed/33671856
http://dx.doi.org/10.3390/mi12020199

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918229/
https://www.ncbi.nlm.nih.gov/pubmed/33671856
http://dx.doi.org/10.3390/mi12020199

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