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High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography

Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and int...

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Autores principales: Kim, Simon, Lee, Su Eon, Park, Jun Hyun, Shin, Jin Yong, Lee, Bom, Lim, Heo Yeon, Oh, Young Taek, Hwang, Jun Pyo, Seon, Seung Won, Kim, Seung Hee, Yu, Tae Sang, Kim, Bong Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918588/
https://www.ncbi.nlm.nih.gov/pubmed/33672839
http://dx.doi.org/10.3390/polym13040566
_version_ 1783657957588729856
author Kim, Simon
Lee, Su Eon
Park, Jun Hyun
Shin, Jin Yong
Lee, Bom
Lim, Heo Yeon
Oh, Young Taek
Hwang, Jun Pyo
Seon, Seung Won
Kim, Seung Hee
Yu, Tae Sang
Kim, Bong Hoon
author_facet Kim, Simon
Lee, Su Eon
Park, Jun Hyun
Shin, Jin Yong
Lee, Bom
Lim, Heo Yeon
Oh, Young Taek
Hwang, Jun Pyo
Seon, Seung Won
Kim, Seung Hee
Yu, Tae Sang
Kim, Bong Hoon
author_sort Kim, Simon
collection PubMed
description Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and interaction between 2D materials and substrate significantly deteriorate the device performance. Several top-down approaches have been suggested to solve the problem. Unfortunately, however, they have some drawbacks such as a complicated fabrication process, a high production cost, or a poor mechanical property. Here, we suggest the partially suspended 2D materials-based field-effect transistors (FETs) by introducing block copolymer (BCP) lithography to fabricate the substrate effect-free 2D electronic devices. A wide range of nanometer size holes (diameter = 31~43 nm) is successfully realized with a BCP self-assembly nanopatterning process. With this approach, the interaction mechanism between active 2D materials and substrate is elucidated by precisely measuring the device performance at varied feature size. Our strategy can be widely applied to fabricate 2D materials-based high performance electronic, optoelectronic, and energy devices using a versatile self-assembly nanopatterning process.
format Online
Article
Text
id pubmed-7918588
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-79185882021-03-02 High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography Kim, Simon Lee, Su Eon Park, Jun Hyun Shin, Jin Yong Lee, Bom Lim, Heo Yeon Oh, Young Taek Hwang, Jun Pyo Seon, Seung Won Kim, Seung Hee Yu, Tae Sang Kim, Bong Hoon Polymers (Basel) Article Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and interaction between 2D materials and substrate significantly deteriorate the device performance. Several top-down approaches have been suggested to solve the problem. Unfortunately, however, they have some drawbacks such as a complicated fabrication process, a high production cost, or a poor mechanical property. Here, we suggest the partially suspended 2D materials-based field-effect transistors (FETs) by introducing block copolymer (BCP) lithography to fabricate the substrate effect-free 2D electronic devices. A wide range of nanometer size holes (diameter = 31~43 nm) is successfully realized with a BCP self-assembly nanopatterning process. With this approach, the interaction mechanism between active 2D materials and substrate is elucidated by precisely measuring the device performance at varied feature size. Our strategy can be widely applied to fabricate 2D materials-based high performance electronic, optoelectronic, and energy devices using a versatile self-assembly nanopatterning process. MDPI 2021-02-14 /pmc/articles/PMC7918588/ /pubmed/33672839 http://dx.doi.org/10.3390/polym13040566 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kim, Simon
Lee, Su Eon
Park, Jun Hyun
Shin, Jin Yong
Lee, Bom
Lim, Heo Yeon
Oh, Young Taek
Hwang, Jun Pyo
Seon, Seung Won
Kim, Seung Hee
Yu, Tae Sang
Kim, Bong Hoon
High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography
title High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography
title_full High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography
title_fullStr High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography
title_full_unstemmed High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography
title_short High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography
title_sort high performance field-effect transistors based on partially suspended 2d materials via block copolymer lithography
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918588/
https://www.ncbi.nlm.nih.gov/pubmed/33672839
http://dx.doi.org/10.3390/polym13040566
work_keys_str_mv AT kimsimon highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT leesueon highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT parkjunhyun highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT shinjinyong highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT leebom highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT limheoyeon highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT ohyoungtaek highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT hwangjunpyo highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT seonseungwon highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT kimseunghee highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT yutaesang highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography
AT kimbonghoon highperformancefieldeffecttransistorsbasedonpartiallysuspended2dmaterialsviablockcopolymerlithography