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High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography
Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and int...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918588/ https://www.ncbi.nlm.nih.gov/pubmed/33672839 http://dx.doi.org/10.3390/polym13040566 |
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author | Kim, Simon Lee, Su Eon Park, Jun Hyun Shin, Jin Yong Lee, Bom Lim, Heo Yeon Oh, Young Taek Hwang, Jun Pyo Seon, Seung Won Kim, Seung Hee Yu, Tae Sang Kim, Bong Hoon |
author_facet | Kim, Simon Lee, Su Eon Park, Jun Hyun Shin, Jin Yong Lee, Bom Lim, Heo Yeon Oh, Young Taek Hwang, Jun Pyo Seon, Seung Won Kim, Seung Hee Yu, Tae Sang Kim, Bong Hoon |
author_sort | Kim, Simon |
collection | PubMed |
description | Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and interaction between 2D materials and substrate significantly deteriorate the device performance. Several top-down approaches have been suggested to solve the problem. Unfortunately, however, they have some drawbacks such as a complicated fabrication process, a high production cost, or a poor mechanical property. Here, we suggest the partially suspended 2D materials-based field-effect transistors (FETs) by introducing block copolymer (BCP) lithography to fabricate the substrate effect-free 2D electronic devices. A wide range of nanometer size holes (diameter = 31~43 nm) is successfully realized with a BCP self-assembly nanopatterning process. With this approach, the interaction mechanism between active 2D materials and substrate is elucidated by precisely measuring the device performance at varied feature size. Our strategy can be widely applied to fabricate 2D materials-based high performance electronic, optoelectronic, and energy devices using a versatile self-assembly nanopatterning process. |
format | Online Article Text |
id | pubmed-7918588 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-79185882021-03-02 High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography Kim, Simon Lee, Su Eon Park, Jun Hyun Shin, Jin Yong Lee, Bom Lim, Heo Yeon Oh, Young Taek Hwang, Jun Pyo Seon, Seung Won Kim, Seung Hee Yu, Tae Sang Kim, Bong Hoon Polymers (Basel) Article Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and interaction between 2D materials and substrate significantly deteriorate the device performance. Several top-down approaches have been suggested to solve the problem. Unfortunately, however, they have some drawbacks such as a complicated fabrication process, a high production cost, or a poor mechanical property. Here, we suggest the partially suspended 2D materials-based field-effect transistors (FETs) by introducing block copolymer (BCP) lithography to fabricate the substrate effect-free 2D electronic devices. A wide range of nanometer size holes (diameter = 31~43 nm) is successfully realized with a BCP self-assembly nanopatterning process. With this approach, the interaction mechanism between active 2D materials and substrate is elucidated by precisely measuring the device performance at varied feature size. Our strategy can be widely applied to fabricate 2D materials-based high performance electronic, optoelectronic, and energy devices using a versatile self-assembly nanopatterning process. MDPI 2021-02-14 /pmc/articles/PMC7918588/ /pubmed/33672839 http://dx.doi.org/10.3390/polym13040566 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kim, Simon Lee, Su Eon Park, Jun Hyun Shin, Jin Yong Lee, Bom Lim, Heo Yeon Oh, Young Taek Hwang, Jun Pyo Seon, Seung Won Kim, Seung Hee Yu, Tae Sang Kim, Bong Hoon High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography |
title | High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography |
title_full | High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography |
title_fullStr | High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography |
title_full_unstemmed | High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography |
title_short | High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography |
title_sort | high performance field-effect transistors based on partially suspended 2d materials via block copolymer lithography |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7918588/ https://www.ncbi.nlm.nih.gov/pubmed/33672839 http://dx.doi.org/10.3390/polym13040566 |
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