Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga(2)O(3) Field-Effect Transistors

Interface traps between a gate insulator and beta-gallium oxide (β-Ga(2)O(3)) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature and hysteresis at high temperature are investi...

Descripción completa

Detalles Bibliográficos
Autores principales: Park, Youngseo, Ma, Jiyeon, Yoo, Geonwook, Heo, Junseok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7920063/
https://www.ncbi.nlm.nih.gov/pubmed/33669289
http://dx.doi.org/10.3390/nano11020494

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7920063/
https://www.ncbi.nlm.nih.gov/pubmed/33669289
http://dx.doi.org/10.3390/nano11020494

Ejemplares similares