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Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga(2)O(3) Field-Effect Transistors

Interface traps between a gate insulator and beta-gallium oxide (β-Ga(2)O(3)) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature and hysteresis at high temperature are investi...

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Detalles Bibliográficos
Autores principales:	Park, Youngseo, Ma, Jiyeon, Yoo, Geonwook, Heo, Junseok
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7920063/ https://www.ncbi.nlm.nih.gov/pubmed/33669289 http://dx.doi.org/10.3390/nano11020494

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