Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O [Formula: see text] /(Ar+O [Formula: see text]) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwav...

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Detalles Bibliográficos
Autores principales: Hu, Shiben, Lu, Kuankuan, Ning, Honglong, Yao, Rihui, Gong, Yanfen, Pan, Zhangxu, Guo, Chan, Wang, Jiantai, Pang, Chao, Gong, Zheng, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7922092/
https://www.ncbi.nlm.nih.gov/pubmed/33670767
http://dx.doi.org/10.3390/nano11020522
Descripción
Sumario:In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O [Formula: see text] /(Ar+O [Formula: see text]) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay ([Formula: see text]-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm [Formula: see text] /Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.

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