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Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators
The thermoelectric performance of nanostructured low dimensional silicon and silicon-germanium has been functionally compared device-wise. The arrays of nanowires of both materials, grown by a VLS-CVD (Vapor-Liquid-Solid Chemical Vapor Deposition) method, have been monolithically integrated in a sil...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7922322/ https://www.ncbi.nlm.nih.gov/pubmed/33670539 http://dx.doi.org/10.3390/nano11020517 |
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author | Fonseca, Luis Donmez-Noyan, Inci Dolcet, Marc Estrada-Wiese, Denise Santander, Joaquin Salleras, Marc Gadea, Gerard Pacios, Mercè Sojo, Jose-Manuel Morata, Alex Tarancon, Albert |
author_facet | Fonseca, Luis Donmez-Noyan, Inci Dolcet, Marc Estrada-Wiese, Denise Santander, Joaquin Salleras, Marc Gadea, Gerard Pacios, Mercè Sojo, Jose-Manuel Morata, Alex Tarancon, Albert |
author_sort | Fonseca, Luis |
collection | PubMed |
description | The thermoelectric performance of nanostructured low dimensional silicon and silicon-germanium has been functionally compared device-wise. The arrays of nanowires of both materials, grown by a VLS-CVD (Vapor-Liquid-Solid Chemical Vapor Deposition) method, have been monolithically integrated in a silicon micromachined structure in order to exploit the improved thermoelectric properties of nanostructured silicon-based materials. The device architecture helps to translate a vertically occurring temperature gradient into a lateral temperature difference across the nanowires. Such thermocouple is completed with a thin film metal leg in a unileg configuration. The device is operative on its own and can be largely replicated (and interconnected) using standard IC (Integrated Circuits) and MEMS (Micro-ElectroMechanical Systems) technologies. Despite SiGe nanowires devices show a lower Seebeck coefficient and a higher electrical resistance, they exhibit a much better performance leading to larger open circuit voltages and a larger overall power supply. This is possible due to the lower thermal conductance of the nanostructured SiGe ensemble that enables a much larger internal temperature difference for the same external thermal gradient. Indeed, power densities in the μW/cm(2) could be obtained for such devices when resting on hot surfaces in the 50–200 °C range under natural convection even without the presence of a heat exchanger. |
format | Online Article Text |
id | pubmed-7922322 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-79223222021-03-03 Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators Fonseca, Luis Donmez-Noyan, Inci Dolcet, Marc Estrada-Wiese, Denise Santander, Joaquin Salleras, Marc Gadea, Gerard Pacios, Mercè Sojo, Jose-Manuel Morata, Alex Tarancon, Albert Nanomaterials (Basel) Article The thermoelectric performance of nanostructured low dimensional silicon and silicon-germanium has been functionally compared device-wise. The arrays of nanowires of both materials, grown by a VLS-CVD (Vapor-Liquid-Solid Chemical Vapor Deposition) method, have been monolithically integrated in a silicon micromachined structure in order to exploit the improved thermoelectric properties of nanostructured silicon-based materials. The device architecture helps to translate a vertically occurring temperature gradient into a lateral temperature difference across the nanowires. Such thermocouple is completed with a thin film metal leg in a unileg configuration. The device is operative on its own and can be largely replicated (and interconnected) using standard IC (Integrated Circuits) and MEMS (Micro-ElectroMechanical Systems) technologies. Despite SiGe nanowires devices show a lower Seebeck coefficient and a higher electrical resistance, they exhibit a much better performance leading to larger open circuit voltages and a larger overall power supply. This is possible due to the lower thermal conductance of the nanostructured SiGe ensemble that enables a much larger internal temperature difference for the same external thermal gradient. Indeed, power densities in the μW/cm(2) could be obtained for such devices when resting on hot surfaces in the 50–200 °C range under natural convection even without the presence of a heat exchanger. MDPI 2021-02-18 /pmc/articles/PMC7922322/ /pubmed/33670539 http://dx.doi.org/10.3390/nano11020517 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Fonseca, Luis Donmez-Noyan, Inci Dolcet, Marc Estrada-Wiese, Denise Santander, Joaquin Salleras, Marc Gadea, Gerard Pacios, Mercè Sojo, Jose-Manuel Morata, Alex Tarancon, Albert Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators |
title | Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators |
title_full | Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators |
title_fullStr | Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators |
title_full_unstemmed | Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators |
title_short | Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators |
title_sort | transitioning from si to sige nanowires as thermoelectric material in silicon-based microgenerators |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7922322/ https://www.ncbi.nlm.nih.gov/pubmed/33670539 http://dx.doi.org/10.3390/nano11020517 |
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