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Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam
Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm(2) regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor pro...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7926367/ https://www.ncbi.nlm.nih.gov/pubmed/33672262 http://dx.doi.org/10.3390/s21041550 |
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author | Greiffenberg, Dominic Andrä, Marie Barten, Rebecca Bergamaschi, Anna Brückner, Martin Busca, Paolo Chiriotti, Sabina Chsherbakov, Ivan Dinapoli, Roberto Fajardo, Pablo Fröjdh, Erik Hasanaj, Shqipe Kozlowski, Pawel Lopez Cuenca, Carlos Lozinskaya, Anastassiya Meyer, Markus Mezza, Davide Mozzanica, Aldo Redford, Sophie Ruat, Marie Ruder, Christian Schmitt, Bernd Thattil, Dhanya Tinti, Gemma Tolbanov, Oleg Tyazhev, Anton Vetter, Seraphin Zarubin, Andrei Zhang, Jiaguo |
author_facet | Greiffenberg, Dominic Andrä, Marie Barten, Rebecca Bergamaschi, Anna Brückner, Martin Busca, Paolo Chiriotti, Sabina Chsherbakov, Ivan Dinapoli, Roberto Fajardo, Pablo Fröjdh, Erik Hasanaj, Shqipe Kozlowski, Pawel Lopez Cuenca, Carlos Lozinskaya, Anastassiya Meyer, Markus Mezza, Davide Mozzanica, Aldo Redford, Sophie Ruat, Marie Ruder, Christian Schmitt, Bernd Thattil, Dhanya Tinti, Gemma Tolbanov, Oleg Tyazhev, Anton Vetter, Seraphin Zarubin, Andrei Zhang, Jiaguo |
author_sort | Greiffenberg, Dominic |
collection | PubMed |
description | Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm(2) regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 10(9) Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e(−) ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, lower noise, and more homogeneous effective pixel size. In a previous work, a hole lifetime of 1.4 ns for GaAs:Cr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called “crater effect” which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the “crater effect” is further elaborated by measuring GaAs:Cr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photon beam was used to illuminate well defined positions along the pixels in order to corroborate the findings from the previous work and to further characterize the consequences of the “crater effect” on the detector operation. |
format | Online Article Text |
id | pubmed-7926367 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-79263672021-03-04 Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam Greiffenberg, Dominic Andrä, Marie Barten, Rebecca Bergamaschi, Anna Brückner, Martin Busca, Paolo Chiriotti, Sabina Chsherbakov, Ivan Dinapoli, Roberto Fajardo, Pablo Fröjdh, Erik Hasanaj, Shqipe Kozlowski, Pawel Lopez Cuenca, Carlos Lozinskaya, Anastassiya Meyer, Markus Mezza, Davide Mozzanica, Aldo Redford, Sophie Ruat, Marie Ruder, Christian Schmitt, Bernd Thattil, Dhanya Tinti, Gemma Tolbanov, Oleg Tyazhev, Anton Vetter, Seraphin Zarubin, Andrei Zhang, Jiaguo Sensors (Basel) Article Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm(2) regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 10(9) Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e(−) ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, lower noise, and more homogeneous effective pixel size. In a previous work, a hole lifetime of 1.4 ns for GaAs:Cr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called “crater effect” which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the “crater effect” is further elaborated by measuring GaAs:Cr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photon beam was used to illuminate well defined positions along the pixels in order to corroborate the findings from the previous work and to further characterize the consequences of the “crater effect” on the detector operation. MDPI 2021-02-23 /pmc/articles/PMC7926367/ /pubmed/33672262 http://dx.doi.org/10.3390/s21041550 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Greiffenberg, Dominic Andrä, Marie Barten, Rebecca Bergamaschi, Anna Brückner, Martin Busca, Paolo Chiriotti, Sabina Chsherbakov, Ivan Dinapoli, Roberto Fajardo, Pablo Fröjdh, Erik Hasanaj, Shqipe Kozlowski, Pawel Lopez Cuenca, Carlos Lozinskaya, Anastassiya Meyer, Markus Mezza, Davide Mozzanica, Aldo Redford, Sophie Ruat, Marie Ruder, Christian Schmitt, Bernd Thattil, Dhanya Tinti, Gemma Tolbanov, Oleg Tyazhev, Anton Vetter, Seraphin Zarubin, Andrei Zhang, Jiaguo Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam |
title | Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam |
title_full | Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam |
title_fullStr | Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam |
title_full_unstemmed | Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam |
title_short | Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam |
title_sort | characterization of chromium compensated gaas sensors with the charge-integrating jungfrau readout chip by means of a highly collimated pencil beam |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7926367/ https://www.ncbi.nlm.nih.gov/pubmed/33672262 http://dx.doi.org/10.3390/s21041550 |
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