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Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using th...

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Autores principales: Shtepliuk, Ivan, Khranovskyy, Volodymyr, Ievtushenko, Arsenii, Yakimova, Rositsa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7926399/
https://www.ncbi.nlm.nih.gov/pubmed/33671677
http://dx.doi.org/10.3390/ma14041035
_version_ 1783659457131053056
author Shtepliuk, Ivan
Khranovskyy, Volodymyr
Ievtushenko, Arsenii
Yakimova, Rositsa
author_facet Shtepliuk, Ivan
Khranovskyy, Volodymyr
Ievtushenko, Arsenii
Yakimova, Rositsa
author_sort Shtepliuk, Ivan
collection PubMed
description The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.
format Online
Article
Text
id pubmed-7926399
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-79263992021-03-04 Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD Shtepliuk, Ivan Khranovskyy, Volodymyr Ievtushenko, Arsenii Yakimova, Rositsa Materials (Basel) Article The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics. MDPI 2021-02-22 /pmc/articles/PMC7926399/ /pubmed/33671677 http://dx.doi.org/10.3390/ma14041035 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Shtepliuk, Ivan
Khranovskyy, Volodymyr
Ievtushenko, Arsenii
Yakimova, Rositsa
Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD
title Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD
title_full Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD
title_fullStr Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD
title_full_unstemmed Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD
title_short Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD
title_sort temperature-dependent photoluminescence of zno thin films grown on off-axis sic substrates by apmocvd
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7926399/
https://www.ncbi.nlm.nih.gov/pubmed/33671677
http://dx.doi.org/10.3390/ma14041035
work_keys_str_mv AT shtepliukivan temperaturedependentphotoluminescenceofznothinfilmsgrownonoffaxissicsubstratesbyapmocvd
AT khranovskyyvolodymyr temperaturedependentphotoluminescenceofznothinfilmsgrownonoffaxissicsubstratesbyapmocvd
AT ievtushenkoarsenii temperaturedependentphotoluminescenceofznothinfilmsgrownonoffaxissicsubstratesbyapmocvd
AT yakimovarositsa temperaturedependentphotoluminescenceofznothinfilmsgrownonoffaxissicsubstratesbyapmocvd