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Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator

Electrical manipulation of magnetization could be an essential function for energy-efficient spintronics technology. A magnetic topological insulator, possessing a magnetically gapped surface state with spin-polarized electrons, not only exhibits exotic topological phases relevant to the quantum ano...

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Detalles Bibliográficos
Autores principales: Mogi, Masataka, Yasuda, Kenji, Fujimura, Reika, Yoshimi, Ryutaro, Ogawa, Naoki, Tsukazaki, Atsushi, Kawamura, Minoru, Takahashi, Kei S., Kawasaki, Masashi, Tokura, Yoshinori
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7930265/
https://www.ncbi.nlm.nih.gov/pubmed/33658496
http://dx.doi.org/10.1038/s41467-021-21672-9
Descripción
Sumario:Electrical manipulation of magnetization could be an essential function for energy-efficient spintronics technology. A magnetic topological insulator, possessing a magnetically gapped surface state with spin-polarized electrons, not only exhibits exotic topological phases relevant to the quantum anomalous Hall state but also enables the electrical control of its magnetic state at the surface. Here, we demonstrate efficient current-induced switching of the surface ferromagnetism in hetero-bilayers consisting of the topological insulator (Bi(1-x)Sb(x))(2)Te(3) and the ferromagnetic insulator Cr(2)Ge(2)Te(6), where the proximity-induced ferromagnetic surface states play two roles: efficient charge-to-spin current conversion and emergence of large anomalous Hall effect. The sign reversal of the surface ferromagnetic states with current injection is clearly observed, accompanying the nearly full magnetization reversal in the adjacent insulating Cr(2)Ge(2)Te(6) layer of an optimal thickness range. The present results may facilitate an electrical control of dissipationless topological-current circuits.