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High-frequency rectifiers based on type-II Dirac fermions
The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimeta...
Autores principales: | , , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7952558/ https://www.ncbi.nlm.nih.gov/pubmed/33707448 http://dx.doi.org/10.1038/s41467-021-21906-w |
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author | Zhang, Libo Chen, Zhiqingzi Zhang, Kaixuan Wang, Lin Xu, Huang Han, Li Guo, Wanlong Yang, Yao Kuo, Chia-Nung Lue, Chin Shan Mondal, Debashis Fuji, Jun Vobornik, Ivana Ghosh, Barun Agarwal, Amit Xing, Huaizhong Chen, Xiaoshuang Politano, Antonio Lu, Wei |
author_facet | Zhang, Libo Chen, Zhiqingzi Zhang, Kaixuan Wang, Lin Xu, Huang Han, Li Guo, Wanlong Yang, Yao Kuo, Chia-Nung Lue, Chin Shan Mondal, Debashis Fuji, Jun Vobornik, Ivana Ghosh, Barun Agarwal, Amit Xing, Huaizhong Chen, Xiaoshuang Politano, Antonio Lu, Wei |
author_sort | Zhang, Libo |
collection | PubMed |
description | The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe(2), with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W(−1) at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging. |
format | Online Article Text |
id | pubmed-7952558 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-79525582021-03-28 High-frequency rectifiers based on type-II Dirac fermions Zhang, Libo Chen, Zhiqingzi Zhang, Kaixuan Wang, Lin Xu, Huang Han, Li Guo, Wanlong Yang, Yao Kuo, Chia-Nung Lue, Chin Shan Mondal, Debashis Fuji, Jun Vobornik, Ivana Ghosh, Barun Agarwal, Amit Xing, Huaizhong Chen, Xiaoshuang Politano, Antonio Lu, Wei Nat Commun Article The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe(2), with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W(−1) at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging. Nature Publishing Group UK 2021-03-11 /pmc/articles/PMC7952558/ /pubmed/33707448 http://dx.doi.org/10.1038/s41467-021-21906-w Text en © The Author(s) 2021 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Zhang, Libo Chen, Zhiqingzi Zhang, Kaixuan Wang, Lin Xu, Huang Han, Li Guo, Wanlong Yang, Yao Kuo, Chia-Nung Lue, Chin Shan Mondal, Debashis Fuji, Jun Vobornik, Ivana Ghosh, Barun Agarwal, Amit Xing, Huaizhong Chen, Xiaoshuang Politano, Antonio Lu, Wei High-frequency rectifiers based on type-II Dirac fermions |
title | High-frequency rectifiers based on type-II Dirac fermions |
title_full | High-frequency rectifiers based on type-II Dirac fermions |
title_fullStr | High-frequency rectifiers based on type-II Dirac fermions |
title_full_unstemmed | High-frequency rectifiers based on type-II Dirac fermions |
title_short | High-frequency rectifiers based on type-II Dirac fermions |
title_sort | high-frequency rectifiers based on type-ii dirac fermions |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7952558/ https://www.ncbi.nlm.nih.gov/pubmed/33707448 http://dx.doi.org/10.1038/s41467-021-21906-w |
work_keys_str_mv | AT zhanglibo highfrequencyrectifiersbasedontypeiidiracfermions AT chenzhiqingzi highfrequencyrectifiersbasedontypeiidiracfermions AT zhangkaixuan highfrequencyrectifiersbasedontypeiidiracfermions AT wanglin highfrequencyrectifiersbasedontypeiidiracfermions AT xuhuang highfrequencyrectifiersbasedontypeiidiracfermions AT hanli highfrequencyrectifiersbasedontypeiidiracfermions AT guowanlong highfrequencyrectifiersbasedontypeiidiracfermions AT yangyao highfrequencyrectifiersbasedontypeiidiracfermions AT kuochianung highfrequencyrectifiersbasedontypeiidiracfermions AT luechinshan highfrequencyrectifiersbasedontypeiidiracfermions AT mondaldebashis highfrequencyrectifiersbasedontypeiidiracfermions AT fujijun highfrequencyrectifiersbasedontypeiidiracfermions AT vobornikivana highfrequencyrectifiersbasedontypeiidiracfermions AT ghoshbarun highfrequencyrectifiersbasedontypeiidiracfermions AT agarwalamit highfrequencyrectifiersbasedontypeiidiracfermions AT xinghuaizhong highfrequencyrectifiersbasedontypeiidiracfermions AT chenxiaoshuang highfrequencyrectifiersbasedontypeiidiracfermions AT politanoantonio highfrequencyrectifiersbasedontypeiidiracfermions AT luwei highfrequencyrectifiersbasedontypeiidiracfermions |