Cargando…
2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit
This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F po...
Autores principales: | Na, Jongyun, Yi, Sang-Hwa, Shin, Jaekyung, Koo, Hyungmo, Bae, Jongseok, Hwang, Keum-Cheol, Lee, Kang-Yoon, Yang, Youngoo |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7956501/ https://www.ncbi.nlm.nih.gov/pubmed/33668929 http://dx.doi.org/10.3390/s21051608 |
Ejemplares similares
-
5.8 GHz High-Efficiency RF–DC Converter Based on Common-Ground Multiple-Stack Structure
por: Bae, Jongseok, et al.
Publicado: (2019) -
Diamond/GaN HEMTs: Where from and Where to?
por: Mendes, Joana C., et al.
Publicado: (2022) -
A 37–40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT
por: Song, Jae-Hyeok, et al.
Publicado: (2023) -
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023) -
Computational-fitting method for mobility extraction in GaN HEMT
por: Chang, Kuan-Chang, et al.
Publicado: (2023)