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Universal Filter Based on Compact CMOS Structure of VDDDA
This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is comp...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7957634/ https://www.ncbi.nlm.nih.gov/pubmed/33804400 http://dx.doi.org/10.3390/s21051683 |
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author | Jaikla, Winai Khateb, Fabian Kulej, Tomasz Pitaksuttayaprot, Koson |
author_facet | Jaikla, Winai Khateb, Fabian Kulej, Tomasz Pitaksuttayaprot, Koson |
author_sort | Jaikla, Winai |
collection | PubMed |
description | This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter. |
format | Online Article Text |
id | pubmed-7957634 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-79576342021-03-16 Universal Filter Based on Compact CMOS Structure of VDDDA Jaikla, Winai Khateb, Fabian Kulej, Tomasz Pitaksuttayaprot, Koson Sensors (Basel) Article This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter. MDPI 2021-03-01 /pmc/articles/PMC7957634/ /pubmed/33804400 http://dx.doi.org/10.3390/s21051683 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Jaikla, Winai Khateb, Fabian Kulej, Tomasz Pitaksuttayaprot, Koson Universal Filter Based on Compact CMOS Structure of VDDDA |
title | Universal Filter Based on Compact CMOS Structure of VDDDA |
title_full | Universal Filter Based on Compact CMOS Structure of VDDDA |
title_fullStr | Universal Filter Based on Compact CMOS Structure of VDDDA |
title_full_unstemmed | Universal Filter Based on Compact CMOS Structure of VDDDA |
title_short | Universal Filter Based on Compact CMOS Structure of VDDDA |
title_sort | universal filter based on compact cmos structure of vddda |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7957634/ https://www.ncbi.nlm.nih.gov/pubmed/33804400 http://dx.doi.org/10.3390/s21051683 |
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