Study of Radiation Characteristics of Intrinsic Josephson Junction Terahertz Emitters with Different Thickness of Bi(2)Sr(2)CaCu(2)O(8+δ) Crystals

The radiation intensity from the intrinsic Josephson junction high- [Formula: see text] superconductor Bi [Formula: see text] Sr [Formula: see text] CaCu [Formula: see text] O [Formula: see text] terahertz emitters (Bi2212-THz emitters) is one of the most important characteristics for application uses of the device. In principle, it would be expected to be improved with increasing the number of intrinsic Josephson junctions N in the emitters. In order to further improve the device characteristics, we have developed a stand alone type of mesa structures (SAMs) of Bi2212 crystals. Here, we understood the radiation characteristics of our SAMs more deeply, after we studied the radiation characteristics from three SAMs (S1, S2, and S3) with different thicknesses. Comparing radiation characteristics of the SAMs in which the number of intrinsic Josephson junctions are N∼ 1300 (S1), 2300 (S2), and 3100 (S3), respectively, the radiation intensity, frequency as well as the characteristics of the device working bath temperature are well understood. The strongest radiation of the order of few tens of microwatt was observed from the thickest SAM of S3. We discussed this feature through the [Formula: see text]-relationship and the radiation efficiency of a patch antenna. The thinner SAM of S1 can generate higher radiation frequencies than the thicker one of S3 due to the difference of the applied voltage per junctions limited by the heat-removal performance of the device structures. The observed features in this study are worthwhile designing Bi2212-THz emitters with better emission characteristics for many applications.