Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known abou...

Descripción completa

Detalles Bibliográficos
Autores principales: Bellando, Francesco, Mele, Leandro Julian, Palestri, Pierpaolo, Zhang, Junrui, Ionescu, Adrian Mihai, Selmi, Luca
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7961866/
https://www.ncbi.nlm.nih.gov/pubmed/33806584
http://dx.doi.org/10.3390/s21051779

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7961866/
https://www.ncbi.nlm.nih.gov/pubmed/33806584
http://dx.doi.org/10.3390/s21051779

Ejemplares similares