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An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors
The front-end electronics (FEE) of the Compact Muon Solenoid (CMS) is needed very low power consumption and higher readout bandwidth to match the low power requirement of its Short Strip application-specific integrated circuits (ASIC) (SSA) and to handle a large number of pileup events in the High-L...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7962011/ https://www.ncbi.nlm.nih.gov/pubmed/33806350 http://dx.doi.org/10.3390/s21051760 |
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author | Jérôme, Folla Kamdem Evariste, Wembe Tafo Bernard, Essimbi Zobo Crespo, Maria Liz Cicuttin, Andres Reaz, Mamun Bin Ibne Bhuiyan, Mohammad Arif Sobhan |
author_facet | Jérôme, Folla Kamdem Evariste, Wembe Tafo Bernard, Essimbi Zobo Crespo, Maria Liz Cicuttin, Andres Reaz, Mamun Bin Ibne Bhuiyan, Mohammad Arif Sobhan |
author_sort | Jérôme, Folla Kamdem |
collection | PubMed |
description | The front-end electronics (FEE) of the Compact Muon Solenoid (CMS) is needed very low power consumption and higher readout bandwidth to match the low power requirement of its Short Strip application-specific integrated circuits (ASIC) (SSA) and to handle a large number of pileup events in the High-Luminosity Large Hadron Collider (LHC). A low-noise, wide bandwidth, and ultra-low power FEE for the pixel-strip sensor of the CMS has been designed and simulated in a 0.35 µm Complementary Metal Oxide Semiconductor (CMOS) process. The design comprises a Charge Sensitive Amplifier (CSA) and a fast Capacitor-Resistor-Resistor-Capacitor (CR-RC) pulse shaper (PS). A compact structure of the CSA circuit has been analyzed and designed for high throughput purposes. Analytical calculations were performed to achieve at least 998 MHz gain bandwidth, and then overcome pileup issue in the High-Luminosity LHC. The spice simulations prove that the circuit can achieve 88 dB dc-gain while exhibiting up to 1 GHz gain-bandwidth product (GBP). The stability of the design was guaranteed with an 82-degree phase margin while 214 ns optimal shaping time was extracted for low-power purposes. The robustness of the design against radiations was performed and the amplitude resolution of the proposed front-end was controlled at 1.87% FWHM (full width half maximum). The circuit has been designed to handle up to 280 fC input charge pulses with 2 pF maximum sensor capacitance. In good agreement with the analytical calculations, simulations outcomes were validated by post-layout simulations results, which provided a baseline gain of 546.56 mV/MeV and 920.66 mV/MeV, respectively, for the CSA and the shaping module while the ENC (Equivalent Noise Charge) of the device was controlled at 37.6 e(−) at 0 pF with a noise slope of 16.32 e(−)/pF. Moreover, the proposed circuit dissipates very low power which is only 8.72 µW from a 3.3 V supply and the compact layout occupied just 0.0205 mm(2) die area. |
format | Online Article Text |
id | pubmed-7962011 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-79620112021-03-17 An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors Jérôme, Folla Kamdem Evariste, Wembe Tafo Bernard, Essimbi Zobo Crespo, Maria Liz Cicuttin, Andres Reaz, Mamun Bin Ibne Bhuiyan, Mohammad Arif Sobhan Sensors (Basel) Article The front-end electronics (FEE) of the Compact Muon Solenoid (CMS) is needed very low power consumption and higher readout bandwidth to match the low power requirement of its Short Strip application-specific integrated circuits (ASIC) (SSA) and to handle a large number of pileup events in the High-Luminosity Large Hadron Collider (LHC). A low-noise, wide bandwidth, and ultra-low power FEE for the pixel-strip sensor of the CMS has been designed and simulated in a 0.35 µm Complementary Metal Oxide Semiconductor (CMOS) process. The design comprises a Charge Sensitive Amplifier (CSA) and a fast Capacitor-Resistor-Resistor-Capacitor (CR-RC) pulse shaper (PS). A compact structure of the CSA circuit has been analyzed and designed for high throughput purposes. Analytical calculations were performed to achieve at least 998 MHz gain bandwidth, and then overcome pileup issue in the High-Luminosity LHC. The spice simulations prove that the circuit can achieve 88 dB dc-gain while exhibiting up to 1 GHz gain-bandwidth product (GBP). The stability of the design was guaranteed with an 82-degree phase margin while 214 ns optimal shaping time was extracted for low-power purposes. The robustness of the design against radiations was performed and the amplitude resolution of the proposed front-end was controlled at 1.87% FWHM (full width half maximum). The circuit has been designed to handle up to 280 fC input charge pulses with 2 pF maximum sensor capacitance. In good agreement with the analytical calculations, simulations outcomes were validated by post-layout simulations results, which provided a baseline gain of 546.56 mV/MeV and 920.66 mV/MeV, respectively, for the CSA and the shaping module while the ENC (Equivalent Noise Charge) of the device was controlled at 37.6 e(−) at 0 pF with a noise slope of 16.32 e(−)/pF. Moreover, the proposed circuit dissipates very low power which is only 8.72 µW from a 3.3 V supply and the compact layout occupied just 0.0205 mm(2) die area. MDPI 2021-03-04 /pmc/articles/PMC7962011/ /pubmed/33806350 http://dx.doi.org/10.3390/s21051760 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Jérôme, Folla Kamdem Evariste, Wembe Tafo Bernard, Essimbi Zobo Crespo, Maria Liz Cicuttin, Andres Reaz, Mamun Bin Ibne Bhuiyan, Mohammad Arif Sobhan An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors |
title | An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors |
title_full | An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors |
title_fullStr | An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors |
title_full_unstemmed | An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors |
title_short | An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors |
title_sort | 8.72 µw low-noise and wide bandwidth fee design for high-throughput pixel-strip (ps) sensors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7962011/ https://www.ncbi.nlm.nih.gov/pubmed/33806350 http://dx.doi.org/10.3390/s21051760 |
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