Cargando…

Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors

We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capaci...

Descripción completa

Detalles Bibliográficos
Autores principales:	Noh, Eun-Kyung, Boampong, Amos, Konno, Yu, Shibasaki, Yuji, Lee, Jae-Hyun, Choi, Yoonseuk, Kim, Min-Hoi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7962438/ https://www.ncbi.nlm.nih.gov/pubmed/33800191 http://dx.doi.org/10.3390/ma14051276

Ejemplares similares

The intrinsic volumetric capacitance of conducting polymers: pseudo-capacitors or double-layer supercapacitors?
por: Sahalianov, Ihor, et al.
Publicado: (2019)

Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors
por: Do, M. T., et al.
Publicado: (2020)

Predicting the capacitance of carbon-based electric double layer capacitors by machine learning
por: Su, Haiping, et al.
Publicado: (2019)

Transparent Ferroelectric Capacitors on Glass
por: Sette, Daniele, et al.
Publicado: (2017)

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
por: Baek, Sungpyo, et al.
Publicado: (2022)

Electrode Mass Balancing as an Inexpensive and Simple Method to Increase the Capacitance of Electric Double-Layer Capacitors
por: Andres, Britta, et al.
Publicado: (2016)

Polarization fatigue of organic ferroelectric capacitors
por: Zhao, Dong, et al.
Publicado: (2014)

Nonvolatile ferroelectric field-effect transistors
por: Chai, Xiaojie, et al.
Publicado: (2020)

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors
por: Tian, Bo Bo, et al.
Publicado: (2015)

Correction: Electrode Mass Balancing as an Inexpensive and Simple Method to Increase the Capacitance of Electric Double-Layer Capacitors
Publicado: (2017)

Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors
por: Lee, Song, et al.
Publicado: (2023)

Correction: Correction: Electrode Mass Balancing as an Inexpensive and Simple Method to Increase the Capacitance of Electric Double-Layer Capacitors
Publicado: (2017)

Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
por: Gu, Bon-Seong, et al.
Publicado: (2023)

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation
por: Sun, Huabin, et al.
Publicado: (2014)

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO(2) Films
por: Jang, Chan-Hee, et al.
Publicado: (2022)

Inter-digital capacitors with aerosol-deposited high-K dielectric layer for highest capacitance value in capacitive super-sensing applications
por: Kim, Eun-Seong, et al.
Publicado: (2019)

Unravelling and controlling hidden imprint fields in ferroelectric capacitors
por: Liu, Fanmao, et al.
Publicado: (2016)

Anti-Ferroelectric Ceramics for High Energy Density Capacitors
por: Chauhan, Aditya, et al.
Publicado: (2015)

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure (Adv. Sci. 21/2022)
por: Baek, Sungpyo, et al.
Publicado: (2022)

Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
por: Li, Jing, et al.
Publicado: (2019)

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors
por: Song, Seul Ji, et al.
Publicado: (2016)

Controlling the on/off current ratio of ferroelectric field-effect transistors
por: Katsouras, Ilias, et al.
Publicado: (2015)

Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
por: Dragoman, Mircea, et al.
Publicado: (2020)

Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits
por: Zhang, Donglin, et al.
Publicado: (2023)

Why Do Ferroelectrics Exhibit Negative Capacitance?
por: Hoffmann, Michael, et al.
Publicado: (2019)

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors
por: Wang, Chao, et al.
Publicado: (2015)

Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene) Ultrathin Films
por: Li, Long, et al.
Publicado: (2017)

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors
por: Torabi, Solmaz, et al.
Publicado: (2017)

Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect Transistors
por: Kim, Do-Kyung, et al.
Publicado: (2019)

Ferroelectric-gate field effect transistor memories: device physics and applications
por: Park, Byung-Eun, et al.
Publicado: (2016)

Ferroelectric-gate field effect transistor memories: device physics and applications
por: Park, Byung-Eun, et al.
Publicado: (2020)

Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
por: Cao, Ronggen, et al.
Publicado: (2014)

Local Maps of the Polarization and Depolarization in Organic Ferroelectric Field-Effect Transistors
por: Cai, Ronggang, et al.
Publicado: (2016)

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
por: Zhu, Zhongyunshen, et al.
Publicado: (2023)

Capacitive neural network with neuro-transistors
por: Wang, Zhongrui, et al.
Publicado: (2018)

Activated Carbons and Their Evaluation in Electric Double Layer Capacitors
por: Kierzek, Krzysztof, et al.
Publicado: (2020)

Re-evaluation of the Energy Density Properties of VDF Ferroelectric Thin-Film Capacitors
por: Tsutsumi, Naoto, et al.
Publicado: (2020)

Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor
por: Zhong, Qilan, et al.
Publicado: (2021)

On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes
por: Khakimov, Roman R., et al.
Publicado: (2022)

Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets
por: Koroleva, Aleksandra A., et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_h2qbq2qcl8fh7vmrijhegrm7bs