Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices

[Image: see text] Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction. Transmission electron microsc...

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Detalles Bibliográficos
Autores principales: Wind, Lukas, Sistani, Masiar, Song, Zehao, Maeder, Xavier, Pohl, Darius, Michler, Johann, Rellinghaus, Bernd, Weber, Walter M., Lugstein, Alois
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7975277/
https://www.ncbi.nlm.nih.gov/pubmed/33683092
http://dx.doi.org/10.1021/acsami.1c00502

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7975277/
https://www.ncbi.nlm.nih.gov/pubmed/33683092
http://dx.doi.org/10.1021/acsami.1c00502

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