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Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide

Material properties depend largely on the dimensionality of the crystal structures and the associated electronic structures. If the crystal-structure dimensionality can be switched reversibly in the same material, then a drastic property change may be controllable. Here, we propose a design route fo...

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Detalles Bibliográficos
Autores principales: Katase, Takayoshi, Takahashi, Yudai, He, Xinyi, Tadano, Terumasa, Ide, Keisuke, Yoshida, Hideto, Kawachi, Shiro, Yamaura, Jun-ichi, Sasase, Masato, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7978423/
https://www.ncbi.nlm.nih.gov/pubmed/33741599
http://dx.doi.org/10.1126/sciadv.abf2725
Descripción
Sumario:Material properties depend largely on the dimensionality of the crystal structures and the associated electronic structures. If the crystal-structure dimensionality can be switched reversibly in the same material, then a drastic property change may be controllable. Here, we propose a design route for a direct three-dimensional (3D) to 2D structural phase transition, demonstrating an example in (Pb(1−x)Sn(x))Se alloy system, where Pb(2+) and Sn(2+) have similar ns(2) pseudo-closed shell configurations, but the former stabilizes the 3D rock-salt-type structure while the latter a 2D layered structure. However, this system has no direct phase boundary between these crystal structures under thermal equilibrium. We succeeded in inducing the direct 3D-2D structural phase transition in (Pb(1−x)Sn(x))Se alloy epitaxial films by using a nonequilibrium growth technique. Reversible giant electronic property change was attained at x ~ 0.5 originating in the abrupt band structure switch from gapless Dirac-like state to semiconducting state.