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Interface-engineered electron and hole tunneling
Although the phenomenon of tunneling has been known since the advent of quantum mechanics, it continues to enrich our understanding of many fields of science. Commonly, this effect is described in terms of electrons traversing the potential barrier that exceeds their kinetic energy due to the wave n...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7990336/ https://www.ncbi.nlm.nih.gov/pubmed/33762343 http://dx.doi.org/10.1126/sciadv.abf1033 |
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author | Guo, Rui Tao, Lingling Li, Ming Liu, Zhongran Lin, Weinan Zhou, Guowei Chen, Xiaoxin Liu, Liang Yan, Xiaobing Tian, He Tsymbal, Evgeny Y. Chen, Jingsheng |
author_facet | Guo, Rui Tao, Lingling Li, Ming Liu, Zhongran Lin, Weinan Zhou, Guowei Chen, Xiaoxin Liu, Liang Yan, Xiaobing Tian, He Tsymbal, Evgeny Y. Chen, Jingsheng |
author_sort | Guo, Rui |
collection | PubMed |
description | Although the phenomenon of tunneling has been known since the advent of quantum mechanics, it continues to enrich our understanding of many fields of science. Commonly, this effect is described in terms of electrons traversing the potential barrier that exceeds their kinetic energy due to the wave nature of electrons. This picture of electron tunneling fails, however, for tunnel junctions, where the Fermi energy lies sufficiently close to the insulator valence band, in which case, hole tunneling dominates. We demonstrate the deterministic control of electron and hole tunneling in interface-engineered Pt/BaTiO(3)/La(0.7)Sr(0.3)MnO(3) ferroelectric tunnel junctions by reversal of tunneling electroresistance. Our electrical measurements, electron microscopy and spectroscopy characterization, and theoretical modeling unambiguously point out to electron or hole tunneling regimes depending on interface termination. The interface control of the tunneling regime offers designed functionalities of electronic devices. |
format | Online Article Text |
id | pubmed-7990336 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-79903362021-04-02 Interface-engineered electron and hole tunneling Guo, Rui Tao, Lingling Li, Ming Liu, Zhongran Lin, Weinan Zhou, Guowei Chen, Xiaoxin Liu, Liang Yan, Xiaobing Tian, He Tsymbal, Evgeny Y. Chen, Jingsheng Sci Adv Research Articles Although the phenomenon of tunneling has been known since the advent of quantum mechanics, it continues to enrich our understanding of many fields of science. Commonly, this effect is described in terms of electrons traversing the potential barrier that exceeds their kinetic energy due to the wave nature of electrons. This picture of electron tunneling fails, however, for tunnel junctions, where the Fermi energy lies sufficiently close to the insulator valence band, in which case, hole tunneling dominates. We demonstrate the deterministic control of electron and hole tunneling in interface-engineered Pt/BaTiO(3)/La(0.7)Sr(0.3)MnO(3) ferroelectric tunnel junctions by reversal of tunneling electroresistance. Our electrical measurements, electron microscopy and spectroscopy characterization, and theoretical modeling unambiguously point out to electron or hole tunneling regimes depending on interface termination. The interface control of the tunneling regime offers designed functionalities of electronic devices. American Association for the Advancement of Science 2021-03-24 /pmc/articles/PMC7990336/ /pubmed/33762343 http://dx.doi.org/10.1126/sciadv.abf1033 Text en Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). https://creativecommons.org/licenses/by-nc/4.0/ https://creativecommons.org/licenses/by-nc/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Guo, Rui Tao, Lingling Li, Ming Liu, Zhongran Lin, Weinan Zhou, Guowei Chen, Xiaoxin Liu, Liang Yan, Xiaobing Tian, He Tsymbal, Evgeny Y. Chen, Jingsheng Interface-engineered electron and hole tunneling |
title | Interface-engineered electron and hole tunneling |
title_full | Interface-engineered electron and hole tunneling |
title_fullStr | Interface-engineered electron and hole tunneling |
title_full_unstemmed | Interface-engineered electron and hole tunneling |
title_short | Interface-engineered electron and hole tunneling |
title_sort | interface-engineered electron and hole tunneling |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7990336/ https://www.ncbi.nlm.nih.gov/pubmed/33762343 http://dx.doi.org/10.1126/sciadv.abf1033 |
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