Correlation between Optical Localization-State and Electrical Deep-Level State in In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As Quantum Well Structure

The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As quantum well structure that comprises two quantum-confined electron-states and two hole-subbands. The sample clearly exhibited the...

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Detalles Bibliográficos
Autores principales: Ahn, Il-Ho, Kim, Deuk Young, Lee, Sejoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7996928/
https://www.ncbi.nlm.nih.gov/pubmed/33652753
http://dx.doi.org/10.3390/nano11030585

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7996928/
https://www.ncbi.nlm.nih.gov/pubmed/33652753
http://dx.doi.org/10.3390/nano11030585

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