Cargando…
Author Correction: UV induced resistive switching in hybrid polymer metal oxide memristors
Autores principales: | Stathopoulos, Spyros, Tzouvadaki, Ioulia, Prodromakis, Themis |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7997871/ https://www.ncbi.nlm.nih.gov/pubmed/33772080 http://dx.doi.org/10.1038/s41598-021-86897-6 |
Ejemplares similares
-
UV induced resistive switching in hybrid polymer metal oxide memristors
por: Stathopoulos, Spyros, et al.
Publicado: (2020) -
Monitoring PSA levels as chemical state-variables in metal-oxide memristors
por: Tzouvadaki, Ioulia, et al.
Publicado: (2020) -
Multibit memory operation of metal-oxide bi-layer memristors
por: Stathopoulos, Spyros, et al.
Publicado: (2017) -
Technology agnostic frequency characterization methodology for memristors
por: Manouras, Vasileios, et al.
Publicado: (2021) -
Selectively biased tri-terminal vertically-integrated memristor configuration
por: Manouras, Vasileios, et al.
Publicado: (2022)