Study of a Gate-Engineered Vertical TFET with GaSb/GaAs(0.5)Sb(0.5) Heterojunction

It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the vertical TFETs. This paper demonstrates a dual...

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Detalles Bibliográficos
Autores principales: Xie, Haiwu, Chen, Yanning, Liu, Hongxia, Guo, Dan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7998445/
https://www.ncbi.nlm.nih.gov/pubmed/33804142
http://dx.doi.org/10.3390/ma14061426

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7998445/
https://www.ncbi.nlm.nih.gov/pubmed/33804142
http://dx.doi.org/10.3390/ma14061426

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