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Study of a Gate-Engineered Vertical TFET with GaSb/GaAs(0.5)Sb(0.5) Heterojunction
It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the vertical TFETs. This paper demonstrates a dual...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7998445/ https://www.ncbi.nlm.nih.gov/pubmed/33804142 http://dx.doi.org/10.3390/ma14061426 |