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Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material

Increasingly, two-dimensional (2D) materials are being investigated for their potential use as surface-enhanced Raman spectroscopy (SERS) active substrates. Hexagonal Boron Nitride (hBN), a layered 2D material analogous to graphene, is mostly used as a passivation layer/dielectric substrate for nano...

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Autores principales: Basu, Nilanjan, Satya Bharathi, Moram Sree, Sharma, Manju, Yadav, Kanchan, Parmar, Avanish Singh, Soma, Venugopal Rao, Lahiri, Jayeeta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7998565/
https://www.ncbi.nlm.nih.gov/pubmed/33801504
http://dx.doi.org/10.3390/nano11030622
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author Basu, Nilanjan
Satya Bharathi, Moram Sree
Sharma, Manju
Yadav, Kanchan
Parmar, Avanish Singh
Soma, Venugopal Rao
Lahiri, Jayeeta
author_facet Basu, Nilanjan
Satya Bharathi, Moram Sree
Sharma, Manju
Yadav, Kanchan
Parmar, Avanish Singh
Soma, Venugopal Rao
Lahiri, Jayeeta
author_sort Basu, Nilanjan
collection PubMed
description Increasingly, two-dimensional (2D) materials are being investigated for their potential use as surface-enhanced Raman spectroscopy (SERS) active substrates. Hexagonal Boron Nitride (hBN), a layered 2D material analogous to graphene, is mostly used as a passivation layer/dielectric substrate for nanoelectronics application. We have investigated the SERS activity of few-layer hBN film synthesized on copper foil using atmospheric pressure chemical vapor deposition. We have drop casted the probe molecules onto the hBN substrate and measured the enhancement effect due to the substrate using a 532 nm excitation laser. We observed an enhancement of ≈10(3) for malachite green and ≈10(4) for methylene blue and rhodamine 6G dyes, respectively. The observed enhancement factors are consistent with the theoretically calculated interaction energies of MB > R6G > MG with a single layer of hBN. We also observed that the enhancement is independent of the film thickness and surface morphology. We demonstrate that the hBN films are highly stable, and even for older hBN films prepared 7 months earlier, we were able to achieve similar enhancements when compared to freshly prepared films. Our detailed results and analyses demonstrate the versatility and durability of hBN films for SERS applications.
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spelling pubmed-79985652021-03-28 Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material Basu, Nilanjan Satya Bharathi, Moram Sree Sharma, Manju Yadav, Kanchan Parmar, Avanish Singh Soma, Venugopal Rao Lahiri, Jayeeta Nanomaterials (Basel) Article Increasingly, two-dimensional (2D) materials are being investigated for their potential use as surface-enhanced Raman spectroscopy (SERS) active substrates. Hexagonal Boron Nitride (hBN), a layered 2D material analogous to graphene, is mostly used as a passivation layer/dielectric substrate for nanoelectronics application. We have investigated the SERS activity of few-layer hBN film synthesized on copper foil using atmospheric pressure chemical vapor deposition. We have drop casted the probe molecules onto the hBN substrate and measured the enhancement effect due to the substrate using a 532 nm excitation laser. We observed an enhancement of ≈10(3) for malachite green and ≈10(4) for methylene blue and rhodamine 6G dyes, respectively. The observed enhancement factors are consistent with the theoretically calculated interaction energies of MB > R6G > MG with a single layer of hBN. We also observed that the enhancement is independent of the film thickness and surface morphology. We demonstrate that the hBN films are highly stable, and even for older hBN films prepared 7 months earlier, we were able to achieve similar enhancements when compared to freshly prepared films. Our detailed results and analyses demonstrate the versatility and durability of hBN films for SERS applications. MDPI 2021-03-02 /pmc/articles/PMC7998565/ /pubmed/33801504 http://dx.doi.org/10.3390/nano11030622 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) ).
spellingShingle Article
Basu, Nilanjan
Satya Bharathi, Moram Sree
Sharma, Manju
Yadav, Kanchan
Parmar, Avanish Singh
Soma, Venugopal Rao
Lahiri, Jayeeta
Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material
title Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material
title_full Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material
title_fullStr Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material
title_full_unstemmed Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material
title_short Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material
title_sort large area few-layer hexagonal boron nitride as a raman enhancement material
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7998565/
https://www.ncbi.nlm.nih.gov/pubmed/33801504
http://dx.doi.org/10.3390/nano11030622
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