On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO(2) and Si(x)N(y)) in Multi-Component Fluorocarbon Gas Mixtures

This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO(2), and Si(x)N(y)) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects we...

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Detalles Bibliográficos
Autores principales: Efremov, Alexander, Lee, Byung Jun, Kwon, Kwang-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7999134/
https://www.ncbi.nlm.nih.gov/pubmed/33804274
http://dx.doi.org/10.3390/ma14061432

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7999134/
https://www.ncbi.nlm.nih.gov/pubmed/33804274
http://dx.doi.org/10.3390/ma14061432

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